Flexible Hf_(0.5)Zr_(0.5)O_(2)ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility  

作　　者：Yuting Chen Yang Yang Peng Yuan Pengfei Jiang Yuan Wang Yannan Xu Shuxian Lv Yaxin Ding Zhiwei Dang Zhaomeng Gao Tiancheng Gong Yan Wang Qing Luo 

机构地区：[1]Key Laboratory of Microelectronic Devices and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]Department of Mathematics and Theories,Peng Cheng Laboratory,No.2,Xingke 1st Street,Nanshan,Shenzhen 518000,China

出　　处：《Nano Research》2022年第4期2913-2918,共6页纳米研究（英文版）

基　　金：This work was supported in part by the National Natural Science Foundation of China(Nos.61922083,61804167,61834009,61904200,and 61821091);in part by the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB44000000).

摘　　要：Flexible memory devices are promising for information storage and data processing applications in portable,wearable,and smart electronics operating under curved conditions.In this work,we realized high-performance flexible ferroelectric capacitors based on Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin film by depositing a buffer layer of Al_(2)O_(3)on polyimide(PI)substrates using atomic layer deposition(ALD).The flexible ferroelectric HZO films exhibit high remnant polarization(Pr)of 21μC/cm^(2).Furthermore,deterioration of polarization,retention,and endurance performance was not observed even at a bending radius of 2 mm after 5,000 bending cycles.This work marks a critical step in the development of high-performance flexible HfO_(2)-based ferroelectric memories for next-generation wearable electronic devices.

关 键 词：ferroelectric Hf_(0.5)Zr_(0.5)O_(2)(HZO) Al_(2)O_(3)buffer layer FLEXIBLE 

分 类 号：TB34[一般工业技术—材料科学与工程]