Solution processed high performance perovskite quantum dots/ZnO phototransistors  

作　　者：Md Mehedi Hasan Eric Moyen Jewel Kumer Saha Md Mobaidul Islam Arqum Ali Jin Jang 

机构地区：[1]Advanced Display Research Center(ADRC),Department of Information Display,Kyung Hee University,26,Kyungheedae-ro,Dongdaemun-gu,Seoul 02447,Republic of Korea

出　　处：《Nano Research》2022年第4期3660-3666,共7页纳米研究（英文版）

基　　金：This work was supported by the Technology Innovation Program(No.20011317);Development of an adhesive material capable of morphing more than 50%for flexible devices with a radius of curvature of 1 mm or less funded by the Ministry of Trade,Industry&Energy(MOTIE,Korea).

摘　　要：Phototransistors that can detect visible light have been fabricated using solution processed zinc oxide channel/zirconium oxide gate insulator thin film transistors(TFTs)and room temperature synthesized perovskite quantum dots(PeQDs)as active layer.Typical ZnO thin film transistors did not show a photocurrent under visible light illumination.However,ZnO TFTs decorated with PeQDs exhibited enhanced photocurrent upon exposure to visible light.The device had a responsivity of 567 A/W(617 A/W),a high detectivity of 6.59×10^(13)Jones(1.85×10^(14)J)and a high sensitivity of 10^(7)(10^(8))under green(blue)light at a low drain voltage of 0.1 V.The high photo-responsivity and detectivity under green light resulted from the combination of short ligands in the QDs films and the high mobility of the spray coated ZnO films.Those results are relevant for the development of low cost and low energy consumption phototransistors working in the visible range.

关 键 词：ZnO thin film transistors perovskite quantum dots photo-detectors photo-transistors 

分 类 号：TN32[电子电信—物理电子学]