纳秒脉冲激光制备硅量子点发光的退火效应  

Annealing effect on photoluminescence in silicon quantum dots prepared by nanosecond pulsed laser

作　　者：陈翠芬 张铁民[1] 王梓霖 高连丛 苏畅 王可 王安琛 黄忠梅 黄伟其 彭鸿雁[1] CHEN Cui-fen;ZHANG Tie-min;WANG Zi-lin;GAO Lian-cong;SU Chang;WANG Ke;WANG An-chen;HUANG Zhong-mei;HUANG Wei-qi;PENG Hong-yan(College of Physics and Electronic Engineering,Hainan Normal University,Haikou 571158,China;College of Materials and Metallurgy,Guizhou University,Guiyang 550025,China)

机构地区：[1]海南师范大学物理与电子工程学院,海南海口571158 [2]贵州大学材料与冶金学院,贵州贵阳550025

出　　处：《液晶与显示》2022年第6期703-708,共6页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金(No.11847084);海南省高等学校教育教学改革研究重点项目(No.Hnjg2020ZD-17)。

摘　　要：为了获取高量子效率的硅基光源,利用纳秒脉冲激光在单晶硅片上制备微米级的圆孔形腔阵列,对该样品在高温退火处理后出现的性能进行研究。腔内形成的量子点在波长710 nm附近有很强的光致发光峰。将样品放在1000℃下进行高温退火处理,通过控制退火时间,对比研究退火前后的激发光功率变化的光致发光光谱,可以观察到自发辐射和受激辐射的变化趋势。同时,在退火20 min的腔中不同位置测量到光致发光的强度不同,发现腔体边缘的光致发光最强,这可能与腔体边缘上分布了大量的量子点发光有关。最后,采用标准的LED定标方法测量了腔内的最大光致发光外量子效率(PL-EQE)。检测结果显示退火后腔体内的外量子效率可达9.29%。In order to obtain a silicon-based light source with high quantum efficiency,a micron-sized round hole cavity array was fabricated on monocrystalline silicon wafer in air by using nanosecond pulsed laser.The properties of the sample after annealing at high temperature were investigated.Firstly,the quantum dots formed in the cavity had a stronger emission near 710 nm in photoluminescence(PL)measurement.Then,annealing at 1000℃,the PL spectra before and after annealing were compared by controlling the annealing time.The variation trends of spontaneous and stimulated emission were observed.Annealing for 20 min,the PL intensity was various at different positions in the cavity,and it is found that the PL emission at the cavity edge is the strongest,which may be related to a large number of quantum dots distributed on the edge of the cavity.Finally,adopting standard LED calibration,the maximum PL external quantum efficiency(PL-EQE)in the cavity was measured.Experimental results indicate that the external quantum efficiency in the cavity after annealing can reach 9.29%.

关 键 词：硅量子点 光致发光 高温退火 外量子效率 

分 类 号：O482.31[理学—固体物理] O469[理学—物理]