高纯铟领域关键技术专利分析及对策研究  被引量:1

Patent analysis and Countermeasures of key technologies in the field of high purity indium

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作  者:黄琳 鲍庆煌 庄健 王应武 张鸿勋 汪玲玲 范威 HUANG Lin;BAO Qing-huang;ZHUANG Jian;WANG Ying-wu;ZHANG Hong-xun;WANG Ling-ling;FAN Wei(Yunnan Academy of science and technology,Kunming,Yunnan 6502282;Yunnan Tin Group(holding)Co.,Ltd.,Kunming,Yunnan 650091;Research Institute of nonferrous metals technology and economy Co.,Ltd.,Beijing 100086)

机构地区:[1]云南省科学技术院,云南昆明6502282 [2]云南锡业集团(控股)有限责任公司,云南昆明650091 [3]有色金属技术经济研究院有限责任公司,北京100086

出  处:《世界有色金属》2022年第3期173-175,共3页World Nonferrous Metals

摘  要:本文对高纯铟领域的专利申请情况进行定性和定量分析,发现我国专利申请数量超过日本等其他国家,成为专利申请数量最多的国家,但未形成有利的专利壁垒,并且我国高纯铟专利产出主要以原生铟提纯为主,而国外专利产出以再生铟的提纯回收为主。我国作为铟的消费大国,从铟资源的长远发展战略考虑,我国应该大力加强再生铟回收制备高纯铟的技术研究与应用,确保我国铟资源的可持续发展。This paper makes a qualitative and quantitative analysis on the patent applications in the field of high-purity indium.It is found that the number of patent applications in China exceeds that in Japan and other countries,becoming the country with the largest number of patent applications,but there is no favorable patent barrier.Moreover,the patent output of high-purity indium in China is mainly the purification of primary indium,while the foreign patent output is mainly the purification and recovery of regenerated indium.As a major consumer of indium,considering the long-term development strategy of indium resources,China should vigorously strengthen the technical research and application of recovering regenerated indium to prepare high-purity indium,so as to ensure the sustainable development of indium resources in China.

关 键 词:高纯铟 资源 可持续发展 

分 类 号:P618.64[天文地球—矿床学]

 

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