基于物理结构的GaN HEMTs小信号等效电路的精确建模方法研究  

Study on accurate modeling methods of GaN HEMTs small-signal equivalent circuits based on physical structures

作　　者：缪文韬 王军[1] 刘宇武 MIAO Wentao;WANG Jun;LIU Yuwu(College of Information Engineering,Southwest University of Science and Technology,Mianyang 621010,Sichuan Province,China)

机构地区：[1]西南科技大学信息工程学院,四川绵阳621010

出　　处：《电子元件与材料》2022年第5期531-538,共8页Electronic Components And Materials

基　　金：四川省教育厅资助科研项目(18ZA0502)。

摘　　要：为了有效地表征GaN HEMTs在微波频段下的电学特性,研究了其高频等效电路的精确建模方法。基于GaN HEMTs器件的本征物理结构,综合考虑器件在制版过程中由电极和通孔所带来的寄生特性,描述了一种具有26个详细参数网络的小信号等效电路模型。此模型考虑了器件在工作环境下所受到的集肤效应,同时通过对小信号等效电路进行双端口网络参数分析,推导了其准静态近似的微波等效电路参数直接提取的简化算法,最终通过ADS仿真平台将所建模型和传统模型的S参数模拟结果与实测数据的一致性进行对比,验证了小信号等效电路模型的精确性与参数提取算法的有效性。To effectively characterize the electrical characteristics of GaN HEMTs in the microwave band,an accurate modeling method with its high frequency equivalent circuit was studied.Based on the intrinsic physical structure of GaN HEMTs,a small-signal equivalent circuit model with 26 detailed parameter networks was described by comprehensively considering the parasitic characteristics of the devices caused by electrodes and vias during plate making.This model considers the skin effect of the device in working environment.By analyzing the parameters of the small-signal equivalent circuit in the dual-port network,a simplified algorithm was derived to directly extract the parameters from the quasi-static approximation microwave equivalent circuit.Finally,the consistency of the S-parameter simulation results between the established model and the traditional model was compared with the measured data,which verified the accuracy of the small-signal equivalent circuit model and the effectiveness of the parameter extraction algorithm.

关 键 词：GaN HEMTs 物理结构 小信号模型 参数提取 集肤效应 

分 类 号：TN385[电子电信—物理电子学]