长波p-on-n碲镉汞红外焦平面器件研究进展  

Research Progress of Long Wave p-on-n HgCdTe Infrared Focal Plane Devices

作　　者：郝斐 赵硕 杨海燕[1] 胡易林 HAO Fei;ZHAO Shuo;YANG Hai-yan;Hu Yi-lin(North China Research Institute of Electro-Optics, Beijing 100015, China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2022年第4期1-8,共8页Infrared

摘　　要：与n-on-p材料相比,p-on-n材料具有更低的暗电流和更高的工作温度,更适于长波以及高温工作碲镉汞红外焦平面器件。介绍了法国Sofradir公司、美国Raytheon Vision Systems公司以及国内的华北光电技术研究所和昆明物理研究所在长波p-on-n器件上的研究进展。Compared with n-on-p materials,p-on-n materials have lower dark current and higher operating temperature,and are more suitable for long wave and high temperature HgCdTe infrared focal plane devices.The research progress on long wave p-on-n devices by French Sofradir Company,American Raytheon Vision Systems Company,North China Research Institute of Electro-Optics and Kunming Institute of Physics is introduced.

关 键 词：碲镉汞 长波 p-on-n 

分 类 号：TN305[电子电信—物理电子学]