具有失调抑制能力的低功耗带隙基准电路  

A Low-Power Bandgap Reference Circuit with Offset Rejection

作　　者：王纪鹏 WANG Jipeng(College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China)

机构地区：[1]福州大学物理与信息工程学院,福建福州350108

出　　处：《电视技术》2022年第4期1-6,共6页Video Engineering

摘　　要：设计一种具有失调电压抑制能力的低功耗带隙基准电路,采用SMIC 0.18μm CMOS工艺进行实现。通过对新型带隙基准结构工作机理进行分析可知,与常规带隙基准电路相比,新型带隙基准结构具有明显的失调电压抑制能力,降低了对误差放大器的性能要求,具有低功耗、低失调电压和结构简单等优点。A low-power bandgap reference circuit with offset voltage suppression capability is designed and implemented using SMIC 0.18μm CMOS process.By analyzing the working mechanism of the new bandgap reference structure,it can be seen that compared with the conventional bandgap reference circuit,the new bandgap reference structure has obvious offset voltage suppression capability,reduces the performance requirements of the error amplifier,and has low power consumption,low power consumption,and low power consumption.Offset voltage and simple structure.

关 键 词：带隙基准 失调电压 低功耗 蒙特卡洛 

分 类 号：TN402[电子电信—微电子学与固体电子学]