硅辐射探测器的研究进展  

Recent Development on Silicon Radiation Detectors

作　　者：廖非易 李高财 雷林[1] 黄鹤翔 王小英[1] 赵一英[1] Liao Feiyi;Li Gaocai;Lei Lin;Huang Hexiang;Wang Xiaoying;Zhao Yiying(Institute of Materials,China Academy of Engineering Physics,Jiangyou 621908,China;Sichuan Yijing Technology Group Company limited,Jiangyou 621700,China)

机构地区：[1]中国工程物理研究院材料研究所,四川江油621908 [2]四川艺精科技集团有限公司,四川江油621700

出　　处：《云南化工》2022年第5期1-6,共6页Yunnan Chemical Technology

基　　金：国家重点研发计划项目(2018YFF01010000)。

摘　　要：随着半导体技术的不断创新,硅辐射探测器制备技术也在日益更新、不断发展。概述了常见的带电粒子、X(γ)射线硅辐射探测器的发展状况,并对不同种类的硅辐射探测器的工作原理和功能特性进行了简述,以期为硅辐射探测器的新应用和新型半导体辐射探测器的研制提供思路。The innovation of semiconductor technology allows the fast development of silicon radiation detectors.This review outlines the current status of the art in silicon radiation detectors for charged particles and X/γrays.The working mechanisms,the characteristics,and the applications of silicon radiation detectors are briefly described.It is expected to inspire novel applications of silicon radiation detectors and the development of new semiconductor radiation detectors.

关 键 词：硅漂移室探测器 硅微条探测器 电荷耦合探测器 像素探测器 

分 类 号：TL814[核科学技术—核技术及应用]