背散射方法测薄膜厚度和杂质分布  

Measuring film thickness and impurity distribution by backscattering method

作　　者：徐川[1] 付恩刚 楼建玲[1] XU Chuan;FU En-gang;LOU Jian-ling(State Key Laboratory of Nuclear Physics and Technology,School of Physics,Peking University,Beijing 100871,China)

机构地区：[1]北京大学物理学院核物理与核技术国家重点实验室,北京100871

出　　处：《物理实验》2022年第3期10-16,21,共8页Physics Experimentation

基　　金：国家重点研发计划专项资助(No.2017YFE0302500);国家自然科学基金项目资助(No.U21B2082)。

摘　　要：背散射分析是一种定量的、对重元素敏感的离子束分析技术,用于分析固体材料的近表面区域.简述了背散射分析的基本原理、实验装置及具体实验过程,详述了SIMNRA软件在背散射能谱分析中的使用方法.以具体的实验为例,描述了测定薄膜样品的成分及厚度,以及离子注入掺杂样品的杂质浓度及深度分布的测量方法,利用SIMNRA软件对背散射谱进行了模拟分析,模拟结果与实验数据符合较好.实验表明,背散射分析可精确测量薄膜样品的厚度和掺杂样品中的杂质分布.Backscattering spectrometry is a quantitative and heavy elements sensitive ion beam analysis technique for analyzing solid materials in the near-surface region.The basic principle,the experimental device and specific experimental process of backscattering spectrometry were described.The application of SIMNRA software in backscattering spectrometry was introduced.Taken specific experiments,the method for determining the composition and thickness of the film sample,as well as the impurity concentration and depth distribution of the ion-implanted doped sample were described.The simulation results were in good agreement with the experimental data by using SIMNRA software to simulate the backscattering spectrum.Experiments showed that backscattering spectrometry can accurately measure the thickness of thin film and the distribution of impurities in the doped samples.

关 键 词：背散射分析 SIMNRA 深度分辨率 注入剂量 深度分布 

分 类 号：O484.5[理学—固体物理] O571.6[理学—物理]