配电电缆附件复合绝缘界面缺陷类型和位置对电场分布的影响研究  

Influence of Composite Insulation Interface Defect Types and Position on Electric Field Distribution of Distribution Cable Accessories

作　　者：李国倡 梁箫剑 魏艳慧 苏国强 雷清泉[1] Li Guochang;Liang Xiaojian;Wei Yanhui;Su Guoqiang;Lei Qingquan(Institute of Advanced Electrical Materials Qingdao University of Science and Technology,Qingdao,266042,China;Electric Power Research Institute of State Grid Shandong Electric Power Company,Jinan,250002,China)

机构地区：[1]青岛科技大学先进电工材料研究院,青岛266042 [2]国网山东省电力公司电力科学研究院,济南250002

出　　处：《电工技术学报》2022年第11期2707-2715,共9页Transactions of China Electrotechnical Society

基　　金：国网山东省电力公司科技项目资助(52062619002F)。

摘　　要：配电网电缆附件是配电网系统的关键部件,其复合绝缘XLPE/SIR界面是最为薄弱的绝缘位置。该文模拟了电缆附件安装和运行过程中出现的典型缺陷,设计了电缆附件复合绝缘XLPE/SIR界面存在气泡、气隙、水珠、水膜、金属杂质、半导电杂质和绝缘杂质七种界面缺陷结构,通过建立配电网电缆附件界面缺陷电场仿真模型,研究典型缺陷下电缆附件内部电场畸变规律。仿真结果表明:在工频下,气泡缺陷与气隙缺陷在界面上引起的最大电场强度畸变值分别为13kV/mm和4.58kV/mm,随着气泡缺陷尺寸的增加,电场畸变呈小幅增大趋势;水珠缺陷和水膜缺陷引起的最大畸变电场分别为2.94kV/mm和3.74kV/mm,随着缺陷尺寸的增大,电场畸变明显加剧,当尺寸增大两倍时,水珠和水膜引起的最大畸变电场分别提高了18.7%和16%;随着缺陷远离应力锥根部,金属缺陷与半导电缺陷引起的电场畸变先增大后减小,最大畸变电场出现在距离应力锥约2mm处,畸变值约为3.65kV/mm。相比而言,绝缘缺陷引起的最大电场畸变出现在应力锥根部,约为8.74kV/mm,随着缺陷远离应力锥根部电场畸变呈现明显的下降趋势。该文研究结果对于配电网电缆附件故障分析和运行维护具有重要的指导意义。Distribution cable accessory is the key component of distribution network system,and its composite insulation XLPE/SIR interface is the weakest insulation position.In this study,the typical defects that occur during the installation and operation of cable accessories has been simulated,seven kinds of interface defects,such as bubbles,air gap,water droplets,water film,metal impurity,semi-conductive impurity and insulation impurity,were designed at the interface of composite insulation XLPE/SIR of cable accessories,the internal electric field distortion law of cable accessories with typical defects is studied by establishing the electric field simulation model of interface defects of distribution cable accessories.The simulation results show that the maximum field distortion caused by bubble defect and air gap defect at the interface is 13kV/mm and 4.58kV/mm,respectively.With the increase of bubble defect size,the electric field distortion increases slightly.The maximum electric field distortion caused by water drop defect and water film defect is 2.94kV/mm and 3.74kV/mm,respectively.With the increase of defect size,the electric field distortion becomes more serious.When the defect size is doubled,the maximum electric field distortion caused by water droplets and film increases by 18.7%and 16%,respectively.As the defect moves away from the root of the stress cone,the electric field distortion caused by metal defects and semi-conductive defects increases first and then decreases,the maximum distortion electric field appears at about 2mm away from the stress cone,which is about 3.65kV/mm.In contrast,the maximum electric field distortion caused by insulation defects occurred at the root of the stress cone,which was about 8.74kV/mm,and with the defect away from the root of the stress cone,the electric field distortion shows an obvious downward trend.This work has important guiding significance for fault analysis and operation maintenance of cable accessories of distribution network.

关 键 词：电缆附件 复合绝缘 界面缺陷 电场仿真 

分 类 号：TM853[电气工程—高电压与绝缘技术]