IGZO-based neuromorphic transistors with temperature-dependent synaptic plasticity and spiking logics  

作　　者：Ying ZHU Yongli HE Chunsheng CHEN Li ZHU Changjin WAN Qing WAN 

机构地区：[1]School of Electronic Science Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China

出　　处：《Science China(Information Sciences)》2022年第6期214-221,共8页中国科学（信息科学）（英文版）

基　　金：supported by National Key R&D Program of China(Grant No.2019YFB2205400)。

摘　　要：Temperature is one of the vital influential factors for all physiological and mental activities.Studying the influence of temperature on the properties of synaptic devices is of great importance for neuromorphic computing and bionic perception.Here,indium-gallium-zinc-oxide(IGZO)based electrical-doublelayer neuromorphic transistors were proposed for the emulation of temperature-dependent synaptic functions.The influence of temperature on the synaptic plasticity,including excitatory postsynaptic current,pairedpulse facilitation,and dynamic filtering was investigated.Interestingly,temperature induced spiking AND to OR logic switching was demonstrated in an IGZO-based neuromorphic transistor with two in-plane gate electrodes.Our results provided an insight into the temperature-induced synaptic functions and spiking logic switching,which is interesting for neuromorphic systems with biological fidelity.

关 键 词：neuromorphic transistors IGZO TFTs temperature-dependent synaptic plasticity logic transformation 

分 类 号：TN32[电子电信—物理电子学]