Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate  

作　　者：Xiaorong LUO Junyue HUANG Xu SONG Qinfeng JIANG Jie WEI Jian FANG Fei YANG 

机构地区：[1]School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China [2]Global Energy Interconnection Research Institute,Beijing 102209,China

出　　处：《Science China(Information Sciences)》2022年第6期277-278,共2页中国科学（信息科学）（英文版）

基　　金：supported by National Key Research and Development Program of China(Grant No.2016YFB0400502);Postdoctoral Innovative Talent Support Program(Grant No.BX20190059)。

摘　　要：Dear editor,SiC MOSFET has the advantages of low specific onresistance(Ron,sp),high breakdown voltage(BV),high operating temperature,and low thermal resistance.As a switching device,SiC MOSFET needs an anti-paralleled freewheeling diode(FWD)in many cases.Owing to the wide band gap,the body diode in SiC MOSFET has a drawback of high turn-on voltage(VF)in the reverse conduction[1].

关 键 词：TRENCH DIODE BREAKDOWN 

分 类 号：TN386[电子电信—物理电子学]