高比容少层MXene Ti_(3)C_(2)的制备及其超级电容性能  

Preparation and Supercapacitor Performance of FewLayered Ti_(3)C_(2) with High Specific Capacitance

作　　者：王益浩 吴琼[1] 李鹏飞 杨占鑫 张洪涛 WANG Yihao;WU Qiong;LI Pengfei;YANG Zhanxin;ZHANG Hongtao(School of Materials Science and Engineering,Liaoning University of Technology,Jinzhou 121001,China;Liaoning Zhongse Xincai Technology Co.,Ltd,Jinzhou 121000,China)

机构地区：[1]辽宁工业大学材料科学与工程学院,锦州121001 [2]辽宁中色新材科技有限公司,锦州121000

出　　处：《材料研究学报》2022年第3期183-190,共8页Chinese Journal of Materials Research

基　　金：国家自然科学基金(51971106);锦州市“春芽计划”科技攻关项目。

摘　　要：采用微波辅助选择性刻蚀技术制备了原子层间距为1.28 nm的少层Ti_(3)C_(2),其质量比电容为377.64 F/g,比多层Ti_(3)C_(2)提高了154.27%。对两种Ti_(3)C_(2)电化学储能过程的动力学分析结果表明,少层Ti_(3)C_(2)的电荷存储主要是表面电容的贡献,其贡献率为76.28%。Microwaves assisted selective etching technique was used to prepare few-layered Ti_(3)C_(2) with atomic layer spacing of 1.28 nm.The mass specific capacitance is 377.64 F/g,which is 154.27% higher than that of multilayer Ti_(3)C_(2).The kinetic analysis of two kinds of Ti_(3)C_(2) electrochemical storage processes shows that the charge storage of few-layered Ti_(3)C_(2) is mainly contributed by surface capacitance,which is 76.28%.

关 键 词：无机非金属材料 少层Ti_(3)C_(2) 微波辅助刻蚀 比容量 

分 类 号：TQ152[化学工程—电化学工业]