Cd1-xZnxTe晶体中由本征缺陷引起的导电类型转变界面研究  

Position-Dependent Conductivity Transition by Intrinsic Defects in Cd_(1-x)Zn_(x)Te Crystal

作　　者：赵文 孔金丞[1] 姜军[1] 赵增林[1] 陈少璠 宋林伟[1] 俞见云 陈珊 庹梦寒 李俊 贺政 姬荣斌[1] ZHAO Wen;KONG Jincheng;JIANG Jun;ZHAO Zenglin;CHEN Shaofan;SONG Linwei;YU Jianyun;CHEN Shan;TUO Menghan;LI Jun;HE Zheng;JI Rongbin(Kunming Institute of Physics,Kunming 650223,China)

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2022年第6期560-564,共5页Infrared Technology

摘　　要：在富Te生长条件下,采用垂直布里奇曼法(vertical Bridgman method,VB)生长的部分碲锌镉(Cd_(1-x)Zn_(x)Te,CZT)晶体内存在导电类型转变界面。为深入探讨碲锌镉晶体导电类型转变界面形成的原因,结合晶体导电类型和红外光谱透过率的测试结果与第一性原理的理论计算进行分析,结果表明,碲锌镉晶体内的导电类型转变界面是晶体生长过程中形成的Cd空位(V_(Cd))缺陷与Cd间隙(Cd_(i))缺陷导致的。在富Te条件的生长过程中,Cd空位缺陷易于形成,碲锌镉晶体材料中含有大量的Cd空位缺陷,材料的导电型为p型。在晶体生长结束阶段的降温过程中,Cd原子会扩散至碲锌镉晶体中,促进了Cd间隙缺陷的形成,在碲锌镉晶体材料中形成Cd间隙缺陷,导致晶体材料的导电性转变为n型。In this study,the formation of a position-dependent conductivity transition in Cd_(1-x)Zn_(x)Te crystals is investigated.The results indicate that the transition from p-to n-type Cd_(1-x)Zn_(x)Te(x=0.04)can be ascribed to the formation of the V_(Cd)-Cd_(i) interface.Cd vacancies(V_(Cd))are easily generated in the Te-rich condition crystal growth process and are responsible for the p-type conductivity.However,Cd vacancies are filled and the n-type defect,Cd interstitial(Cd_(i)),form in the Cd-rich condition.This leads to the transition from p-type to n-type conductivity during the growth of Cd_(1-x)Zn_(x)Te(x=0.04).

关 键 词：碲锌镉 导电类型转变 Cd空位 扩散 

分 类 号：TN215[电子电信—物理电子学] TN304