纳米金刚石薄膜的掺杂、表/界面调控及性能研究  

Doping,Surface/Interface Regulation and Properties of Nanocrystalline Diamond Films

作　　者：胡晓君 郑玉浩 陈成克 鲁少华 蒋梅燕 李晓 HU Xiaojun;ZHENG Yuhao;CHEN Chengke;LU Shaohua;JIANG Meiyan;LI Xiao(College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China)

机构地区：[1]浙江工业大学材料科学与工程学院,杭州310014

出　　处：《人工晶体学报》2022年第5期865-874,共10页Journal of Synthetic Crystals

基　　金：国家自然科学基金联合重点项目(U1809210);国家重点研发计划(2016YFE0133200);国家国际科技合作计划(2014DFR51160);浙江省重点研发计划一带一路国际合作项目(2018C04021);国家自然科学基金(50972129,50602039,11504325,52002351,52102052);浙江省自然科学基金(LQ15A040004,LY18E020013,LGC21E020001)。

摘　　要：本文综述了近年来国内外研究者在纳米金刚石薄膜的掺杂、导电性能、场发射性能和电化学性能等方面的工作,涉及化学气相沉积法制备n型纳米金刚石薄膜,离子注入掺杂纳米金刚石晶粒提高薄膜的n型导电性能,金属离子注入制备场发射性能良好的纳米金刚石薄膜,低剂量离子注入和晶粒表面氧终止态获得高迁移率n型电导,纳米金刚石/石墨烯复合结构的调控对其电学及电化学性能的影响,以及硼掺杂金刚石薄膜电极的微结构和电化学性能研究等。综合分析发现,晶粒掺杂和表界面协同调控可以提升薄膜的电学性能、场发射性能及电化学性能,为纳米金刚石薄膜在纳米电子器件、电化学电极等领域的应用提供了理论基础。In this paper,doping,electric conductivity,field emission and electrochemical properties of nanocrystalline diamond films are reviewed,which contain n-type nanocrystalline diamond(NCD)films prepared by chemical vapor deposition,improvement of n-type electrical conductivity in NCD films by ion implantation,excellent field emission properties of NCD films prepared by metal ion implantation,high mobility n-type conductivity obtained by low dose ion implantation and oxygen termination on grain surface,regulation of the structure of NCD/graphene and its influence on electrical and electrochemical properties,microstructure and electrochemical regulation of boron-doped NCD film electrodes and so on.It shows through comprehensive analysis that grain doping and surface/interface coordination can improve the electrical properties,field emission properties and electrochemical properties of thin films,which has important application prospects in the fields of diamond-based nano-electronic devices and electrochemical electrodes.

关 键 词：纳米金刚石薄膜 掺杂 表面态 电学性能 n型电导 p型电导 

分 类 号：TB383.2[一般工业技术—材料科学与工程]