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作 者:Fu-Quan Dou Yuan-Jin Wang Jian-An Sun
机构地区:[1]College of Physics and Electronic Engineering,Northwest Normal University,Lanzhou 730070,China
出 处:《Frontiers of physics》2022年第3期101-109,共9页物理学前沿(英文版)
基 金:The work was supported by the National Natural Science Foundation of China(Grant No.12075193).
摘 要:Quantum batteries are energy storage devices that satisfy quantum mechanical principles.How to improve the battery’s performance such as stored energy and power is a crucial element in the quantum battery.Here,we investigate the charging and discharging dynamics of a three-level counterdiabatic stimulated Raman adiabatic passage quantum battery via shortcuts to adiabaticity,which can compensate for undesired transitions to realize a fast adiabatic evolution through the application of an additional control field to an initial Hamiltonian.The scheme can significantly speed up the charging and discharging processes of a three-level quantum battery and obtain more stored energy and higher power compared with the original stimulated Raman adiabatic passage.We explore the effect of both the amplitude and the delay time of driving fields on the performances of the quantum battery.Possible experimental implementation in superconducting circuit and nitrogen–vacancy center is also discussed.
关 键 词:quantum battery charging and discharging dynamics shortcuts to adiabaticity
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