CuW/Cu触头的铜层孔洞消除研究  

Research on Elimination of Holes in Copper Layer of CuW/Cu Contact

作　　者：颜培涛 陈名勇 谢荣文 贾波 徐玮泽 YAN Peitao;CHEN Mingyong;XIE Rongwen;JIA Bo;XU Weize(Guilin Coninst Electrical&Electronic Material Co.,Ltd.,Guangxi Guilin 541004,China)

机构地区：[1]桂林金格电工电子材料科技有限公司,广西桂林541004

出　　处：《电工材料》2022年第3期53-56,共4页Electrical Engineering Materials

摘　　要：探讨了CuW/Cu触头铜层孔洞缺陷形成的原因,并采用定向凝固方式研究了不同保护气氛、加热温度和冷却速率对消除孔洞的效果。结果表明:在惰性气体X气氛下,采用垂直下降定向凝固可以完全消除CuW/Cu触头的铜层孔洞缺陷。The causes of the formation of holes in the copper layer of CuW/Cu contacts were discussed, and the effects of different protective atmosphere, heating temperature and cooling rate on the elimination of holes were studied by directional solidification method. The results show that the hole defects in the copper layer of CuW/Cu contact can be completely eliminated by using the process of vertical descent and directional solidification in inert gas X atmosphere.

关 键 词：CUW 定向凝固 孔洞 

分 类 号：TM201.4[一般工业技术—材料科学与工程]