TiN/Hf_(x)Zr_(1-x)O_(2)/TiN铁电电容器的原位生长与表征  

In Situ Growth and Characterization of TiN/Hf_(x)Zr_(1-x)O_(2)/TiN Ferroelectric Capacitors

作　　者：殷宇豪 沈阳 王虎 陈肖 邵林 华文宇 王娟 崔义 Yuhao Yin;Yang Shen;Hu Wang;Xiao Chen;Lin Shao;Wenyu Hua;Juan Wang;Yi Cui(Vacuum Interconnected Nanotech Workstation,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,Jiangsu Province,China;Nano Science and Technology Institute,University of Science and Technology of China,Hefei 230026,China;Wuxi Petabyte Technology Co.Ltd.,Wuxi 214028,Jiangsu Province,China;Department of Physics and Engineering Physics,The University of Tulsa,Tulsa,OK 74104,USA)

机构地区：[1]中国科学院苏州纳米技术与纳米仿生研究所,纳米真空互联实验站,江苏苏州215123 [2]中国科学技术大学纳米科学与技术学院,合肥230026 [3]无锡拍字节科技有限公司,江苏无锡214028 [4]Department of Physics and Engineering Physics,The University of Tulsa,Tulsa,OK 74104,USA

出　　处：《物理化学学报》2022年第5期89-96,共8页Acta Physico-Chimica Sinica

基　　金：support from Nano Fabrication Facility and Platform for Characterization&Test from Suzhou Institute of Nano-Tech and Nano-Bionics,CAS。

摘　　要：HfO;基铁电电容器,特别是TiN/Hf_(x)Zr_(1-x)O_(2)/TiN金属-绝缘体-金属电容器,由于其良好的稳定性、高性能和互补金属氧化物半导体(CMOS)兼容性,在新一代非易失性存储器中有着广阔的应用前景。由于TiN/Hf_(x)Zr_(1-x)O_(2)/TiN电容器的电性能与Hf_(x)Zr_(1-x)O_(2)铁电薄膜与TiN电极层界面质量相关,因此控制TiN/Hf_(x)Zr_(1-x)O_(2)/TiN异质结构的制备和表征至关重要。本文报道了一种三明治结构:Hf_(x)Zr_(1-x)O_(2)铁电薄膜夹在两个TiN电极之间的新的制备方法,通过超高真空系统互连的原子层沉积(ALD)和磁控溅射设备实现。原位生长和表征结果表明,ZrO_(2)掺杂浓度和快速热退火温度可以调节TiN/Hf_(x)Zr_(1-x)O_(2)/TiN异质结的铁电性能,并能很好地被互连系统监控。在该体系中,通过在HfO2中掺杂50%(molar fraction,x)ZrO_(2)并且在600℃下快速热退火(RTA),获得了21.5μC·cm^(-2)的高剩余极化率和1.35 V的低矫顽电压。HfO;-based ferroelectric capacitors,particularly TiN/Hf_(x)Zr_(1-x)O_(2)/TiN metal insulator metal(MIM)capacitors,have attracted considerable attention as promising candidates in the new generation of nonvolatile memory applications,because of their excellent stability,high performance,and complementary metal oxide semiconductor(CMOS)compatibility.At the electrode interface of TiN/Hf_(x)Zr_(1-x)O_(2)/TiN MIM ferroelectric devices,the existence of the TiO;N;layer,which was formed during Hf_(x)Zr_(1-x)O_(2)film crystallization and TiN oxidization,can affect interface/grain boundary energy,film stress,and conduction band offset at the TiN/Hf_(x)Zr_(1-x)O_(2)interface,thereby affecting the ferroelectric device performance.Because the electrical performance of TiN/Hf_(x)Zr_(1-x)O_(2)/TiN capacitors depends on both the ferroelectric Hf_(x)Zr_(1-x)O_(2)thin films and electrode TiN/insulator Hf_(x)Zr_(1-x)O_(2)interface,it is essential to control the fabrication of the TiN/Hf_(x)Zr_(1-x)O_(2)/TiN heterostructure.Herein,we report a new method for preparing Hf_(x)Zr_(1-x)O_(2)ferroelectric thin films,sandwiched between TiN electrodes,by atomic layer deposition(ALD)and using ultra high vacuum(UHV)sputtering equipment interconnected with an ultra-high vacuum system.The quasi in situ characterization by transmission electron microscopy(TEM),time-of-flight secondary ion mass spectrometry(ToF-SIMS),and other analytical methods conducted in our study indicates that the surface of the bottom TiN electrode does not contain oxygen.Moreover,a flat signal for impurities at the interface suggests that the superior ferroelectric performance of Hf_(x)Zr_(1-x)O_(2)-based device is mainly attributed to the pristine Hf_(x)Zr_(1-x)O_(2)/TiN interface.Furthermore,the ferroelectric properties of TiN/Hf_(x)Zr_(1-x)O_(2)/TiN heterostructures on silicon can be modulated by varying ZrO_(2)doping concentration and rapid thermal annealing(RTA)temperature,which can be well monitored and controlled by the interconnected system.We also investigate the

关 键 词：铁电 表面 界面 HFO 真空互联 原位 

分 类 号：O649[理学—物理化学]