基于Abaqus的SiC阻氚涂层表面裂纹性能的研究  

Performance of cracks on the surface of SiC tritium penetration barrier based on Abaqus

作　　者：刘泽 唐琳[1] 孙付春 张亚飞 余松科 母雪玲 LIU Ze;TANG Lin;SUN Fuchun;ZHANG Yafei;YU Songke;MU Xueling(School of Electronic Information and Electrical Engineering,Chengdu University,Chengdu 610106,China;School of Mechanical Engineering,Chengdu University,Chengdu 610106,China)

机构地区：[1]成都大学电子信息与电气工程学院,成都610106 [2]成都大学机械工程学院,成都610106

出　　处：《核技术》2022年第6期27-32,共6页Nuclear Techniques

摘　　要：在聚变反应堆中阻氚涂层服役期间,涂层表面的裂纹性能以及基底粗糙度是制约涂层服役周期的关键因素。基于Abaqus有限元模拟软件,构建了SiC/316L不锈钢阻氚涂层系统模型。通过对基底表面粗糙度的引入,重点分析了基底粗糙度和涂层表面裂纹之间的关系。结果表明:基底粗糙度对涂层表面裂纹的应变能释放率有显著的影响。当裂纹位于波峰时,应变能释放率最大;当裂纹位于波谷正上方时,应变能释放率最小。相比于光滑交界面,沿着粗糙界面的应力受到了一定程度的抑制效果,呈现降低的趋势。[Background]During the service period of the tritium barrier coating in the fusion reactor,the crack performance of the coating surface and the roughness of the substrate are the key factors restricting the service cycle of the coating.[Purpose]This study aims to clarify the relationship between substrate roughness and coating surface cracks in SiC/316L stainless steel tritium barrier coating system.[Method]Based on the Abaqus finite element software,SiC/316L stainless steel tritium penetration barrier system was established.Factors such as the strain energy release rate,amplitude of substrate and length position were investigated with emphasis on the relationship between substrate roughness and coating surface cracks.[Results]The results show that the substrate roughness has a significant effect on the strain energy release rate of the coating surface cracks.When the crack is above the peak of the substrate,the strain energy release rate is the largest.When the crack is located directly above the valley,the strain energy release rate is the smallest.Compared with the smooth interface,the stress along the rough interface is suppressed,showing a decreasing trend.[Conclusions]This study reveals the influence of crack position on the driving force of crack growth.

关 键 词：SiC阻氚涂层 表面多重裂纹 应变能释放率 应力 

分 类 号：TL99[核科学技术—核技术及应用]