高g值压阻式加速度传感器仿真设计  

Simulation design of high g value piezoresistive acceleration sensor

作　　者：杨雨君 王鹏 陈曼龙[1] 张昌明[1] 杨帆[1] 陈芳芳 YANG Yujun;WANG Peng;CHEN Manlong;ZHANG Changming;YANG Fan;CHEN Fangfang(School of Mechanical Engineering,Shaanxi University of Technology,Hanzhong 723000,China)

机构地区：[1]陕西理工大学机械工程学院,陕西汉中723000

出　　处：《传感器与微系统》2022年第6期78-81,85,共5页Transducer and Microsystem Technologies

基　　金：陕西省科技厅自然科学基础研究计划项目(2020JQ-872);陕西省教育厅专项科学研究计划项目(20JK0506)。

摘　　要：利用硅微材料的压阻效应,结合微机电系统(MEMS)加工技术,设计一种高g值压阻式加速度传感器结构,主要应用于爆炸、冲击测试以及引信侵彻等特殊领域。采用参数分析,确定了传感器的三维模型,提取敏感梁的表面路径,分析总结其应力分布规律,据此确定压敏电阻位置,并设计能单独测量且抗交叉干扰的测量电路。最后通过有限元对传感器敏感结构进行仿真分析,仿真结果表明:该加速度计水平面内其X方向灵敏度为4.37μV/g_(n),Y方向灵敏度为4.44μV/g_(n),一阶固有频率为105.80 kHz,量程可达到15×10^(4)g_(n)。Based on the piezoresistive effect of silicon micro materials and MEMS processing technology,a high g value piezoresistive acceleration sensor is designed,which is mainly used in explosion,impact test,fuze penetration inertial test and other special fields.The three-dimensional model of the sensor is determined using parametric analysis,the surface path of the sensitive beam is extracted,the stress distribution law is analyzed and summarized,the position of the piezoresistor is determined accordingly,and a measurement circuit is designed that can measure separately and is resistant to cross-talk.Finally,simulation analysis on sensitive structure of sensor is carried out.The simulation results show that the accelerometer has a sensitivity of 4.37μV/g_(n) in the horizontal plane in the X direction,4.44μV/g_(n) in the Y direction,a first-order intrinsic frequency is 105.80 kHz and range of 15×10^(4)g_(n).

关 键 词：加速度传感器 压阻式 高G值 灵敏度 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TH39[自动化与计算机技术—控制科学与工程]