碳化硅纳米线增强多孔碳化硅陶瓷基复合材料的制备(英文)  

Porous SiC Ceramic Matrix Composite Reinforced by SiC Nanowires with High Strength and Low Thermal Conductivity

作　　者：阮景 杨金山[1,2] 闫静怡 游潇 王萌萌 胡建宝[1,2] 张翔宇[1,2] 丁玉生[1,2] 董绍明[1,2,5] RUAN Jing;YANG Jinshan;YAN Jingyi;YOU Xiao;WANG Mengmeng;HU Jianbao;ZHANG Xiangyu;DING Yusheng;DONG Shaoming(State Key Laboratory of High Performance Ceramics&Superfine Microstructure,Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 200050,China;Structural Ceramics and Composites Engineering Research Center,Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 201899,China;School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China;University of Chinese Academy of Sciences,Beijing 100039,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室,上海200050 [2]中国科学院上海硅酸盐研究所结构陶瓷及复合材料工程研究中心,上海201899 [3]上海科技大学物质科学与技术学院,上海201210 [4]中国科学院大学,北京100039 [5]中国科学院大学材料科学与光电工程中心,北京100049

出　　处：《无机材料学报》2022年第4期459-466,共8页Journal of Inorganic Materials

基　　金：National Natural Science Foundation of China (51772310);Chinese Academy of Sciences Key Research Program of Frontier Sciences (QYZDY-SSWJSC031);Innovation Academy for Light-duty Gas Turbine;Chinese Academy of Sciences (CXYJJ20-MS-02)。

摘　　要：构建多孔碳化硅纳米线(SiCNWs)网络并控制化学气相渗透(CVI)过程,可设计并获得轻质、高强度和低导热率SiC复合材料。首先将SiCNWs和聚乙烯醇(PVA)混合,制备具有最佳体积分数(15.6%)和均匀孔隙结构的SiCNWs网络;通过控制CVI参数获得具有小而均匀孔隙结构的SiCNWs增强多孔SiC(SiCNWs/SiC)陶瓷基复合材料。SiC基体形貌受沉积参数(如温度和反应气体浓度)的影响,从球状颗粒向六棱锥颗粒形状转变。SiCNWs/SiC陶瓷基复合材料的孔隙率为38.9%时,强度达到(194.3±21.3) MPa,导热系数为(1.9±0.1) W/(m·K),显示出增韧效果,并具有低导热系数。Porous design of SiC composites with lightweight, high strength and low thermal conductivity can be obtained by constructing porous silicon carbide nanowires(SiCNWs) network and controlling chemical vapor infiltration(CVI) process. The SiCNWs network with an optimized volume fraction(15.6%) and uniform pore structure was prepared by mixing SiCNWs and polyvinyl alcohol(PVA) firstly. SiCNWs reinforced porous SiC ceramic matrix composite(SiCNWs/SiC) with a small uniform pore can be obtained by controlling the CVI parameters. The morphology of the grown SiC matrix, from the spherical particles to the hexagonal pyramid particles, can be influenced by the CVI parameters, such as temperature and reactive gas concentration. The strength of the SiCNWs/SiC ceramic matrix composites reaches(194.3±21.3) MPa with a porosity of 38.9% and thermal conductivity of(1.9± 0.1) W/(m·K), which shows the toughening effect and low thermal conductivity design.

关 键 词：SIC基复合材料 碳化硅纳米线 CVI参数 孔隙率 热导率 

分 类 号：TQ174[化学工程—陶瓷工业]