GaAs基大功率半导体激光器的研究进展  

Progress of GaAs Based High⁃power Semiconductor Lasers

作　　者：张旭 董海亮[1] 贾志刚 张爱琴 梁建[3] 许并社[1,4] ZHANG Xu;DONG Hailiang;JIA Zhigang;ZHANG Aiqin;LIANG Jian;XU Bingshe(Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,China;College of Textile Engineering,Taiyuan University of Technology,Taiyuan 030024,China;College of Materials Science and Engineering,Taiyuan University of Technology,Taiyuan 030024,China;Institute of Atomic and Molecular Science,Shaanxi University of Science&Technology,Xi’an 710021,China)

机构地区：[1]太原理工大学新材料界面科学与工程教育部重点实验室,太原030024 [2]太原理工大学轻纺工程学院,太原030024 [3]太原理工大学材料科学与工程学院,太原030024 [4]陕西科技大学材料原子·分子科学研究所,西安710021

出　　处：《材料导报》2022年第12期9-15,共7页Materials Reports

基　　金：国家自然科学基金(61904120,21972103,61604104,51672185);国家重点研发计划(2016YFB0401803);山西省基础研究项目(201801D221124,201801D121101,201901D111111,201901D211090,201601D202029);山西省重点研发项目(201803D31042)。

摘　　要：经半个多世纪的发展,半导体激光器的理论和实践都取得巨大成果。近年来,GaAs基大功率半导体激光器凭其优势,在众多领域得到广泛应用。但是GaAs基大功率半导体激光器仍面临着功率不足、发热量大及光束质量差的问题。光电性能差是限制其应用的关键问题,如何进一步提高激光器的光电性能是半导体激光器面临的挑战。输出功率、电光转换效率、光束质量、寿命和可靠性是衡量半导体激光器性能最重要的参数。电光转换效率直接影响器件的输出功率,转换效率低产生的热量更多,导致器件工作温度升高,使得器件的稳定性变差,严重影响器件的寿命和可靠性。近年来,随着GaAs基大功率半导体激光器外延生长技术的提高、器件结构设计的理论水平提高以及封装技术的提升,激光器的输出功率和电光转换效率均得到了大幅提高。从2007年到2017年,边发射激光器的单管输出功率已由14.7 W提高至33 W,而光抽运面发射器件在2018年单管输出功率高达72 W。2020年单管器件的电光转换效率已高达74.6%。随着高效冷却技术的发展,半导体激光器的寿命已达百万小时以上。本文主要介绍了GaAs基半导体激光器近年来的发展状况,综述了外延结构、输出功率、电光转换效率、光束质量、寿命和可靠性等方面的发展现状,探讨了影响输出功率的各种因素及目前的解决方法,展望了半导体激光器未来的发展趋势。After more than half a century of development of semiconductor laser,great achievements have been made in theory and practice.In recent years,GaAs based high⁃power semiconductor lasers have been widely used in many fields because of their advantages.However,GaAs based high⁃power semiconductor lasers still face the problems of insufficient power,high heat and poor beam quality.The key problem is poor photoelectric performances which limits its application.However,the challenge is how to further improve the overall optoelectronic performance of semiconductor lasers.Output power,electro⁃optic conversion efficiency,beam quality,lifetime and reliability are the most important parameters to evaluate the performances of semiconductor lasers.The electro⁃optic conversion efficiency directly affects the output power.Low conversion efficiency results in more heat,which leads to the increase of working temperature of the device.Lifetime and reliability will get worse obviously because of the deterioration of stability of the device.In recent years,with the improvement of epitaxial growth technology of GaAs based high⁃power semiconductor lasers,the optimization of the theoretical level of laser device structure design and the improvement of packaging technology,the output power and electro⁃optic conversion efficiency of semiconductor lasers have been greatly improved.From 2007 to 2017,the output power of single tube edge emitting laser diode increases from 14.7 W to 33 W.The output power of single tube optical pumped surface emitting laser diode reached 72 W in 2018.The electro⁃optic conversion efficiency of single tube laser diode has reached 74.6%in 2020.With the improvement of high efficient cooling technology,the lifetime of semiconductor lasers has reached more than a million hours.In this paper,the development status of GaAs based semiconductor laser in recent years was mainly introduced.Current development status quo of the extensional structure,output power,electro⁃optic conversion efficiency,beam qual

关 键 词：大功率半导体激光器 砷化镓(GaAs) 输出功率 电光转换效率 光束质量 寿命与可靠性 

分 类 号：TN248.4[电子电信—物理电子学]