一种SiC MOSFET串扰抑制的谐振辅助驱动电路  

A Resonant Auxiliary Drive Circuit for SiC MOSFET to Suppress Crosstalk

作　　者：黄勇胜 张建忠[1] 王宁 Huang Yongsheng;Zhang Jianzhong;Wang Ning(School of Electrical Engineering,Southeast University,Nanjing,210096,China)

机构地区：[1]东南大学电气工程学院,南京210096

出　　处：《电工技术学报》2022年第12期3004-3015,共12页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金重点资助项目(51991384)。

摘　　要：随着SiC MOSFET开关频率的不断增加,逆变器桥臂串扰现象越发严重并易造成桥臂直通短路,这限制了SiC MOSFET开关频率的进一步提高。该文提出一种SiC MOSFET串扰抑制的谐振辅助驱动电路,通过在栅源之间添加电容电感辅助谐振电路,能够在SiC MOSFET关断期间完成负压到零压的变化,同时不需要使用有源器件。当SiC MOSFET开通时,辅助电路让栅极电压从0.7V上升而非负压上升,相较于传统驱动电路,开关速度更快、开关损耗更低;而且同时具备抑制正向串扰和反向串扰的优点。该文分析电路的参数设置,并通过仿真和实验验证了该电路相对于传统驱动电路的优势。With the increase of the switching frequency of SiC MOSFETs,the crosstalk of inverter bridge arm becomes more and more serious,and it is easy to cause the bridge arm through short circuit,which limits the further increase of the switching frequency of SiC MOSFETs.In this paper,a resonant auxiliary driving circuit for SiC MOSFET crosstalk suppressionis proposed.By adding a capacitor inductor auxiliary resonant circuit between the gate and the source,the negative voltage can be changed to zero voltage during the turn-off period of SiC MOSFETs without any active devices.When the SiC MOSFET is turned on,the auxiliary circuit makes the gate voltage rise from 0.7V instead of a negative voltage.Compared with the traditional driving circuit,the switching speed is faster and the switching loss is lower,and alsohas the advantages of forward and reverse crosstalk suppression.This paper analyzes the parameter setting of the circuit,and verifies the advantages of the circuit through simulation and experiment.

关 键 词：串扰抑制 SiC MOSFET 谐振辅助驱动电路 无源电路 

分 类 号：TM23[一般工业技术—材料科学与工程]