Planar-symmetry-breaking induced antisymmetric magnetoresistance in van der Waals ferromagnet Fe_(3)GeTe_(2)  

作　　者：Ping Liu Caixing Liu Zhi Wang Meng Huang Guojing Hu Junxiang Xiang Chao Feng Chen Chen Zongwei Ma Xudong Cui Hualing Zeng Zhigao Sheng Yalin Lu Gen Yin Gong Chen Kai Liu Bin Xiang 

机构地区：[1]Hefei National Laboratory for Physical Sciences at the Microscale,Department of Materials Science&Engineering,CAS Key Lab of Materials for Energy Conversion,University of Science and Technology of China,Hefei 230026,China [2]School of Science,Nanjing University of Posts and Telecommunications,Nanjing 210023,China [3]Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions,High Magnetic Field Laboratory,Chinese Academy of Sciences,Hefei 230031,China [4]Sichuan New Materials Research Center,Institute of Chemical Materials,CAEP,Chengdu 610200,China [5]Anhui Laboratory of Advanced Photon Science and Technology,University of Science and Technology of China,Hefei 230026,China [6]Physics Department,Georgetown University,Washington,DC 20057,USA

出　　处：《Nano Research》2022年第3期2531-2536,共6页纳米研究（英文版）

基　　金：the National Key Research and Development Program of China(No.2017YFA0402902);the National Natural Science Foundation of China(No.1210041089);National Synchrotron Radiation Laboratory(No.KY2060000177),NJUPT-SF(No.NY220163);the US NSF(No.DMR-2005108).

摘　　要：Recently discovered magnetic van der Waals(vdW)materials provide an ideal platform to explore low-dimensional magnetism and spin transport.Its vdW interaction nature opens up unprecedented opportunities to build vertically stacked heterostructures with novel properties and functionalities.By engineering the planar structure as an alternative degree of freedom,herein we demonstrate an antisymmetric magnetoresistance(MR)in a vdW Fe_(3)GeTe_(2)flake with a step terrace that breaks the planar symmetry.This antisymmetric MR originates from a sign change of the anomalous Hall effect and the continuity of the current transport near the boundary of magnetic domains at the step edge.A repeatable domain wall due to the unsynchronized magnetization switching is responsible for this sign change.Such interpretation is supported by the observation of field-dependent domain switching,and the step thickness,temperature,and magnetic field orientation dependent MR.This work opens up new opportunities to encode magnetic information by controlling the planar domain structures in vdW magnets.

关 键 词：2D magnetism Fe_(3)GeTe_(2) planar structure engineering antisymmetric magnetoresistance 

分 类 号：TB30[一般工业技术—材料科学与工程]