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作 者:JINCHAO TONG HENG LUO FEI SUO TIANNING ZHANG DAWEI ZHANG DAO HUA ZHANG
机构地区:[1]School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore 639798,Singapore [2]School of Physics and Electronics,Central South University,Changsha 410083,China [3]Ministry of Education and Shanghai Key Laboratory of Modern Optical System,University of Shanghai for Science and Technology,Shanghai 200093,China
出 处:《Photonics Research》2022年第5期1194-1201,共8页光子学研究(英文版)
基 金:Agency for Science,Technology and Research(SERC 1720700038,SERC A1883c0002);Ministry of Education—Singapore(2017-T1-002-117).
摘 要:Conventional photodetection converts light into electrical signals only in a single electromagnetic waveband.Multiband detection technology is highly desirable because it can handle multispectral information discrimination,identification,and processing.Current epitaxial solid-state multiband detection technologies are mainly within the IR wave range.Here,we report epitaxial indium antimonide on gallium arsenide for IR and millimeter/terahertz wave multiband photodetection.The photoresponse originates from interband transition in optoelectrical semiconductors for IR wave,and surface plasmon polaritons induced nonequilibrium electrons for a millimeter/terahertz wave.The detector shows a strong response for an IR wave with a cutoff wavelength of 6.85 μm and a blackbody detectivity of 1.8×10^(9) Jones at room temperature.For a millimeter/terahertz wave,the detector demonstrates broadband detection from 0.032 THz(9.4 mm)to 0.330 THz(0.9 mm);that is,from Ka to the W and G bands,with a noise equivalent power of 1.0×10^(-13) W Hz^(-1/2) at 0.270 THz(1.1 mm)at room temperature.The detection performance is an order of magnitude better while decreasing the temperature to 170 K,the thermoelectric cooling level.Such detectors,capable of large scale and low cost,are promising for advanced uncooled multiband detection and imaging systems.
关 键 词:MILLIMETER MULTIBAND WAVE
分 类 号:TN20[电子电信—物理电子学]
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