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作 者:王思博 田野[1] 曲波[1] 朱占达[1,2,3,4] 惠勇凌 雷訇[1,2,3,4] 李强 Wang Sibo;Tian Ye;Qu Bo;Zhu Zhanda;Hui Yongling;Lei Hong;Li Qiang(Institute of Laser Engineering,Faculty of Materials and Manufacturing,Beijing University of Technology,Beijing 100124,China;Beijing Engineering Research Center of Laser Technology,Beijing 100124,China;Beijing Higher Institution Engineering Research Center of Advanced Laser Manufacturing,Beijing 100124,China;Key Laboratory of Trans-Scale Laser Manufacturing Technology,Ministry of Education,Beijing 100124,China)
机构地区:[1]北京工业大学材料与制造学部激光工程研究院,北京100124 [2]北京市激光应用技术工程技术研究中心,北京100124 [3]激光先进制造北京市高等学校工程研究中心,北京100124 [4]跨尺度激光成型制造技术教育部重点实验室,北京100124
出 处:《光学学报》2022年第9期170-175,共6页Acta Optica Sinica
基 金:国家自然科学基金(62075003);北京市自然科学基金(4202007,KZ202110005010)。
摘 要:报道了室温下级联中红外Er∶YAG脉冲激光器。通过实验观测到级联发射的特征波长为1469 nm,确定了激发态吸收的特征波长为1676 nm。采用掺杂浓度(原子数分数)分别为7.5%和10%的两种Er∶YAG晶体,通过实验对比了级联与非级联条件下的中红外输出能量。掺杂浓度为7.5%的Er∶YAG中红外激光的最大单脉冲能量由非级联时的0.62 mJ提高至级联时的0.99 mJ,提高了约59.7%;掺杂浓度为10%的Er∶YAG中红外激光的最大单脉冲能量由非级联时的1.04 mJ提高至级联时的1.51 mJ,提高了约45.2%。实验结果表明,常温低掺杂Er∶YAG晶体可实现级联输出,并且级联有助于中红外激光单脉冲能量的提高。Cascaded mid-infrared(MIR)Er∶YAG pulsed lasers at room temperature are reported.The characteristic wavelength of the cascaded emission is experimentally observed to be 1469 nm,and that of the excitedstate absorption is determined as 1676 nm.Er∶YAG crystals with doping concentrations(atomic number fractions)of 7.5%and 10%are adopted to compare the MIR output energy under the cascade and non-cascade conditions.For the Er∶YAG with a doping concentration of 7.5%,the maximum single pulse energy of MIR laser increases from 0.62 mJ(non-cascade)to 0.99 mJ(cascade),increasing by about 59.7%,and for Er∶YAG with a doping concentration of 10%,that increases from 1.04 mJ(non-cascade)to 1.51 mJ(cascade),increasing by about 45.2%.The experimental results confirm the existence of cascade output at room temperature in low-doped Er∶YAG crystals.The cascade is helpful to improve the single pulse energy of the mid-infrared laser.
关 键 词:激光器 Er^(3+)激光器 级联 中红外激光器 激发态吸收
分 类 号:TN248.1[电子电信—物理电子学]
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