面向有机薄膜晶体管的紫外/红外光退火的溶液法氧化锆薄膜性能研究  

Solution-Processed Zirconia Dielectrics with UV/IR Annealing for Organic Film Transistor

作　　者：谢应涛 蔡坤林 陈鹏龙 刘愈 王东平 Xie Yingtao;Cai Kunlin;Chen Penglong;Liu Yu;Wang Dongping(School of Optoelectronic Engineering f Chongqing University of Posts and Telecommunications,Chongqing 400065,China;Suzhou Institute of Biomedical Engineering and Technology,Chinese Academy of Sciences,Suzhou,Jiangsu 215163,China)

机构地区：[1]重庆邮电大学光电工程学院,重庆400065 [2]中国科学院苏州生物医学工程技术研究所,江苏苏州215163

出　　处：《中国激光》2022年第7期23-33,共11页Chinese Journal of Lasers

基　　金：国家自然科学基金(61804019);重庆市教委科学技术研究项目(KJQN201800621);重庆邮电大学博士启动基金(A2016-98)。

摘　　要：首先引入新型油酸配位剂,解决已有溶液法成膜较差的问题,接着引入紫外/红外双光源退火工艺,制备了氧化锆薄膜。与传统的热退火工艺相比,双光源退火能够在较低温度下实现锆盐的分解、还原、氧化,形成高质量氧化锆薄膜。采用紫外分光光度计、原子力显微镜和X射线光电子能谱仪等对制备的氧化锆薄膜进行了表征对比,进而分析了成膜的物理机理。结果表明:所用方法成功实现了低温条件下(<120℃)高质量氧化锆薄膜的制备,薄膜的光学带隙约为5.66 e V,相对介电常数约为22.6,漏电流密度小于10-9 A/cm^(2)@4 MV/cm,表面粗糙度为0.28 nm。最后,基于该氧化锆薄膜绝缘层制备出了低驱动电压的稠合噻吩-吡咯并吡咯二酮聚合物薄膜晶体管,其迁移率为0.50 cm^(2)/(V·s),阈值电压为-0.47 V,电流开关比3.6×10^(7),亚阈值摆幅为0.16 V/dec。Objective Among materials with a high dielectric constant(K),zirconia(ZrO_(x))has a high-K value and largestorage capacity.Additionally,solution method has several advantages,such as low cost and easy preparation,making it gradually replaces the traditional vacuum preparation technology.Therefore,the solution-processed ZrO_(x)film has become a hotspot in the field of high-K film materials.Presently,the precursor of ZrO_(x)is prepared by thesolution method which is mainly composed of organic metal salt(zirconium acetylacetonate),alcohol amine,andsolvent.However,the film shows poor adhesion capacity and several pinhole defects,resulting in high leakagecurrent in the electronic device.Besides,based on the traditional ultraviolet(UV)or thermal annealing process,therelative dielectric constant(ε_(r))of the films is about 10,which is much lower than that of a single crystal ZrO_(x)(~27).To address these problems,a novel ZrO_(x)precursor is developed by adding oleic acid to the solution ofzirconium acetylacetonate and ethanolamine to improve the adhesion of the spin-coated ZrO_(x).Then,the film isilluminated with ultraviolet/infrared(UV/IR)light,thereby solving the problem of large leakage current and lowrelative dielectric constant.Our simple strategy and elegant findings can be helpful in designing high-quality ZrO_(x)insulator films with low-temperature annealing via irradiation,based on the understanding of the relationshipbetween the ZrO_(x)micro/nano structure and annealing process.Methods For ZrOx precursor,zirconium acetylacetonate is dissolved in dimethylformamide at a concentration of 0.3 mol/L.Then,the zirconium acetylacetonate solution is mixed with ethanolamine and oleic acid in the volume ratios of 3∶1 and 75∶1,respectively.This solution is then heated to 65℃and stirred for 3 h to ensure full dissolution.Prior to spin-coating,the solution is filtered through a 0.45μm polytetrafluoroethylene membrane syringe.For the ZrO_(x)film fabrication,the precursor solution is spin-coated on the glass/silicon s

关 键 词：材料 薄膜晶体管 溶液法 氧化锆 紫外/红外退火 

分 类 号：O436[机械工程—光学工程]