硼掺杂金刚石/二硫化钼/金刚石复合膜的电致发光特性  

Electroluminescence of Boron DopedDiamond/MoS_(2)/Diamond Composite Films

作　　者：杨鑫伟 王小平[1] 王丽军[1] 陈佳兴 YANG Xinwei;WANG Xiaoping;WANG Lijun;CHEN Jiaxing(College of Science,University of Shanghai for Science and Technology,Shanghai 200093,China)

机构地区：[1]上海理工大学理学院,上海200093

出　　处：《材料科学与工程学报》2022年第3期430-434,498,共6页Journal of Materials Science and Engineering

基　　金：上海市教委重点创新资助项目(14ZZ137)。

摘　　要：本研究在P型硅衬底上制备了硼掺杂金刚石/MoS_(2)/金刚石复合膜结构的电致发光器件。对器件中薄膜层的组成和微观结构进行了表征,并对器件的伏安特性和电致发光特性进行了研究。结果表明,器件的I-V曲线有轻微的不对称性;器件在正接和反接时都可以发光,但器件的电致发光光谱有明显差异:器件正接时有两个发光宽峰分别位于420和660 nm处,而器件在反接时的两个发光宽峰则分别位于436和680 nm处,且器件反接时的发光强度是正接时的5.4倍。原因在于器件外加不同方向电压时,各薄膜层对电致发光光谱的贡献不同。Boron doped diamond/MoS_(2)/diamond composite films for electroluminescent device were prepared on a P-type silicon substrate.The composition and microstructure of the film layer in the device were characterized.The current-voltage characteristics and electroluminescence(EL)of the device were studied.The experimental results show that the I-V curve of the device has slight asymmetry.The device can emit light under both forward and reverse connection.But,the EL spectra of the devices are significantly different.When the device is in forward connection,two broad luminescence peaks are located at 420 nm and 660 nm.When the device is in reverse connection,two broad peaks are at 436 nm and 680 nm,and the luminescence intensity of the device is 5.4 times of that under forward connection.The reason for the above experimental results is that the contribution of each film layer to the EL spectrum is different under the applied voltage in different directions.

关 键 词：二硫化钼 金刚石薄膜 电致发光 

分 类 号：TB34[一般工业技术—材料科学与工程]