基于0.25μm InP DHBT工艺的340 GHz放大器  

340 GHz Amplifier Based on 0.25μm InP DHBT

作　　者：李茂 孙岩 陆海燕[1,2] 周浩 程伟[1,2] 戴姜平 王学鹏 陈堂胜[1,2] LI Mao;SUN Yan;LU Haiyan;ZHOU Hao;CHENG Wei;DAI Jiangping;WANG Xuepeng;CHEN Tangsheng(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing,210016,CHN;Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]微波毫米波单片集成和模块电路重点实验室,南京210016 [2]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2022年第2期104-108,162,共6页Research & Progress of SSE

摘　　要：基于南京电子器件研究所0.25μm InP DHBT工艺设计并实现了一款340 GHz放大器,采用多层金属堆栈互联的薄膜微带传输线结构,实现了太赫兹低损耗传输线和MIM电容。放大器为六级共发射极拓扑,采用整体匹配方法,通过降低损耗的方式提高增益。通过在片小信号测试系统和功率测试系统测试芯片,测量结果表明该放大器在340 GHz的小信号增益达到10.43 dB,300~340 GHz频率范围内的小信号增益大于10 dB,在340 GHz的输出功率为3.24 dBm。Based on 0.25μm InP DHBT technology of Nanjing Electronic Devices Institute,a 340 GHz amplifier was designed and implemented in this paper.Terahertz low-loss microstrip lines and MIM capacitors were realized by thin-film microstrip transmission line structure with multiple-metal-layer interconnect stack.The amplifier was a six-stage common emitter topology,and overall matching method was adopted to reduce transmission loss and improve gain.The on-chip small signal test system and power test system were used for testing.The test results show that the small signal gain of the amplifier reaches 10.43 dB at 340 GHz,the small signal gain is greater than 10 dB in the frequency range of 300~340 GHz,and the output power is 3.24 dBm at 340 GHz.

关 键 词：太赫兹放大器 InP DHBT 金属堆栈互联 

分 类 号：TN722[电子电信—电路与系统]