Advanced Process and Electron Device Technology  

作　　者：Dan Zhang Xiaojing Su Hao Chang Hao Xu Xiaolei Wang Xiaobin He Junjie Li Fei Zhao Qide Yao Yanna Luo Xueli Ma Hong Yang Yongliang Li Zhenhua Wu Yajuan Su Tao Yang Yayi Wei Anyan Du Huilong Zhu Junfeng Li Huaxiang Yin Jun Luo Tianchun Ye Wenwu Wang 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Tsinghua Science and Technology》2022年第3期534-558,共25页清华大学学报（自然科学版（英文版）

基　　金：the support from the members of Integrated Circuit Advanced Process R&D Center,Institute of Microelectronics,Chinese Academy of Sciences;supported in part by the National Key Project of Science and Technology of China(No.2017ZX02315001-002)。

摘　　要：This article reviews advanced process and electron device technology of integrated circuits,including recent featuring progress and potential solutions for future development.In 5 years,for pushing the performance of fin field-effect transistors(FinFET)to its limitations,several processes and device boosters are provided.Then,the three-dimensional(3 D)integration schemes with alternative materials and device architectures will pave paths for future technology evolution.Finally,it could be concluded that Moore’s law will undoubtedly continue in the next 15 years.

关 键 词：advanced process gate-all-around devices three-dimensional(3D)integration high-mobility channel integrated circuits 

分 类 号：TN40[电子电信—微电子学与固体电子学]