Assessing the effect of hydrogen on the electronic properties of 4H-SiC  

作　　者：Yuanchao Huang Rong Wang Yiqiang Zhang Deren Yang Xiaodong Pi 黄渊超;王蓉;张懿强;杨德仁;皮孝东(State Key Laboratory of Silicon Materials and School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China;Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,Hangzhou Innovation Center,Zhejiang University,Hangzhou 311200,China;School of Materials Science and Engineering&College of Chemistry,Zhengzhou University,Zhengzhou 450001,China)

机构地区：[1]State Key Laboratory of Silicon Materials and School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China [2]Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,Hangzhou Innovation Center,Zhejiang University,Hangzhou 311200,China [3]School of Materials Science and Engineering&College of Chemistry,Zhengzhou University,Zhengzhou 450001,China

出　　处：《Chinese Physics B》2022年第5期540-546,共7页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program of China(Grant No.2018YFB2200101);the National Natural Science Foundation of China(Grant Nos.91964107 and U20A20209);the“Pioneer”and“Leading Goose”Research and Development Program of Zhejiang Province,China(Grant No.2022C01021);partial support from the National Natural Science Foundation of China for Innovative Research Groups(Grant No.61721005);The National Supercomputer Center in Tianjin is acknowledged for computational support。

摘　　要：As a common impurity in 4 H silicon carbide(4 H-Si C),hydrogen(H)may play a role in tuning the electronic properties of 4 H-Si C.In this work,we systemically explore the effect of H on the electronic properties of both n-type and p-type4 H-Si C.The passivation of H on intrinsic defects such as carbon vacancies(V_(Si) )and silicon vacancies(V_(Si)) in 4 H-Si C is also evaluated.We find that interstitial H at the bonding center of the Si-C bond(H_(i)^(bc)) and interstitial H at the tetrahedral center of Si(H_(i)^(bc)) dominate the defect configurations of H in p-type and n-type 4 H-Si C,respectively.In n-type 4 H-Si C,the compensation of HSi-te iis found to pin the Fermi energy and hinder the increase of the electron concentration for highly N-doped 4 H-Si C.The compensation of Hbc iis negligible compared to that of V_(Si)on the p-type doping of Al-doped 4 H-Si C.We further examine whether H can passivate VCand improve the carrier lifetime in 4 H-Si C.It turns out that nonequilibrium passivation of VCby H is effective to eliminate the defect states of V_(Si),which enhances the carrier lifetime of moderately doped 4 H-Si C.Regarding the quantum-qubit applications of 4 H-Si C,we find that H can readily passivate V_(Si)during the creation of V_(Si)centers.Thermal annealing is needed to decompose the resulting V_(Si)-n H(n=1-4)complexes and promote the uniformity of the photoluminescence of V_(Si)arrays in 4 H-Si C.The current work may inspire the impurity engineering of H in 4 H-Si C.

关 键 词：4H-silicon carbide HYDROGEN electronic properties PASSIVATION 

分 类 号：TQ163.4[化学工程—高温制品工业]