Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode  

作　　者：Qiliang Wang Tingting Wang Taofei Pu Shaoheng Cheng Xiaobo Li Liuan Li Jinping Ao 王启亮;王婷婷;蒲涛飞;成绍恒;李小波;李柳暗;敖金平(State Key Laboratory of Superhard Materials,Jilin University,Changchun 130012,China;Shenzhen Research Institute,Jilin University,Shenzhen 518057,China;National Key Discipline Laboratory of Wide Band-gap Semiconductor,School of Microelectronics,Xidian University,Xi’an 710071,China;Institute of Technology and Science,Tokushima University,Tokushima 770-8506,Japan)

机构地区：[1]State Key Laboratory of Superhard Materials,Jilin University,Changchun 130012,China [2]Shenzhen Research Institute,Jilin University,Shenzhen 518057,China [3]National Key Discipline Laboratory of Wide Band-gap Semiconductor,School of Microelectronics,Xidian University,Xi’an 710071,China [4]Institute of Technology and Science,Tokushima University,Tokushima 770-8506,Japan

出　　处：《Chinese Physics B》2022年第5期652-656,共5页中国物理B（英文版）

基　　金：Project supported by the Key-Area Research and Development Program of Guangdong Province,China(Grant No.2020B0101690001);the Natural Science Foundation of Sichuan Province,China(Grant No.22YYJC0596)。

摘　　要：A quasi-vertical Ga N Schottky barrier diode with a hybrid anode structure is proposed to trade off the on-resistance and the breakdown voltage.By inserting a Si N dielectric between the anode metal with a relatively small length,it suppresses the electric field crowding effect without presenting an obvious effect on the forward characteristics.The enhanced breakdown voltage is ascribed to the charge-coupling effect between the insulation dielectric layer and Ga N.On the other hand,the current density is decreased beneath the dielectric layer with the increasing length of the Si N,resulting in a high on-resistance.Furthermore,the introduction of the field plate on the side wall forms an metal-oxide-semiconductor(MOS)channel and decreases the series resistance,but also shows an obvious electric field crowding effect at the bottom of the mesa due to the quasi-vertical structure.

关 键 词：Schottky barrier diode hybrid anode dielectric edge termination 

分 类 号：TN311.7[电子电信—物理电子学]