Photoelectrochemical activity of ZnO:Ag/rGO photo-anodes synthesized by two-steps sol-gel method  

作　　者：D Ben Jemia M Karyaoui M A Wederni A Bardaoui M V Martinez-Huerta M Amlouk R Chtourou 

机构地区：[1]Laboratory of Nanomaterials and Renewable Energy Systems LANSER,Research and Technology Center of Energy,Borj-Cedria Science and Technology Park,BP 95,2050 Hammam-Lif,Tunisia [2]Faculty of Science of Tunis,University of Tunis El Manar,Tunisia [3]Laboratory of Physics of Materials and Nanomaterials Applied to the Environment(LaPhyMNE),Faculty of Sciences of Gabes,Cite Erriadh,University of Gabes,6079 Gabes,Tunisia [4]lnstitute of Catalysis and Petrochemistry,CSIC,in Madrid,Spain [5]Laboratory of Nanomaterials,Nanotechnology and Energy(L2NE),University of Tunis El Manar,Tunisia

出　　处：《Chinese Physics B》2022年第5期691-702,共12页中国物理B（英文版）

基　　金：funded by Tunisian Ministry of Higher Education and Scientific Research through the budget allowed to the implied Tunisian labs。

摘　　要：This work investigated the influence of silver plasmon and reduced graphene oxide(r GO)on the photoelectrochemical performance(PEC)of Zn O thin films synthesized by the sol-gel method.The physicochemical properties of the obtained photo-anodes were systematically studied by using several characterization techniques.The x-ray diffraction analysis showed that all samples presented hexagonal wurtzite structure with a polycrystalline nature.Raman and energy dispersive x-ray(EDX)studies confirmed the existence of both Ag and r GO in Zn O:Ag/r GO thin films.The estimated grain size obtained from scanning electron microscopy(SEM)analysis decreased with Ag doping,then increased to a maximum value after r GO addition.The UV-vis transmission spectra of the as-prepared Zn O:Ag and Zn O:Ag/r GO thin films have shown a reduction in the visible range with a redshift at the absorption edges.The bandgaps were estimated to be around 3.17 e V,2.7 e V,and 2.52 e V for Zn O,Zn O:Ag,and Zn O:Ag/r GO,respectively.Moreover,the electrical measurements revealed that the charge exchange processes were enhanced at the Zn O:Ag/r GO/electrolyte interface,accompanied by an increase in the(PEC)performance compared to Zn O and Zn O:Ag photo-anodes.Consequently,the photocurrent density of Zn O:Ag/r GO(0.2 m A·cm^(-2)) was around 4 and 2.22 times higher than photo-anodes based on undoped Zn O(0.05 m A·cm^(-2)) and Zn O:Ag(0.09 m A·cm^(-2)),respectively.Finally,from the flat band potential and donor density,deduced from the Mott-Schottky,it was clear that all the samples were n-type semiconductors with the highest carrier density for the Zn O:Ag/r GO photo-anode.

关 键 词：zinc oxide reduced graphene oxide silver doping SOL-GEL photoelectrochemical performance 

分 类 号：O646.54[理学—物理化学]