利用变温霍尔效应计算N型Ge的杂质电离能和禁带宽度  

Calculation of the ionization energy and band gap of N-type Ge by temperature-dependent Hall effect

作　　者：郑梓涵 黄之豪 符斯列[1] ZHENG Zi-han;HUANG Zhi-hao;FU Si-lie(National Demonstration Center for Experimental Physics Education,School of Physics and Communication Engineering,South China Normal University,Guangzhou 510003,China)

机构地区：[1]华南师范大学物理与电信工程学院物理学科基础课程国家级实验教学示范中心,广东广州510003

出　　处：《物理实验》2022年第5期10-15,共6页Physics Experimentation

基　　金：国家自然科学基金资助(No.10575039);广东省自然科学基金资助(No.S2013010012548);广东省高校特色创新项目资助(No.2018KTSCX121)。

摘　　要：通过变温霍尔效应实验,在77~420K温度范围内对N型Ge标准样品的电学特性进行测量.根据对高温本征导电区斜率的计算,得到样品禁带宽度E_(g);对低温杂质电离区斜率的计算,得到样品杂质电离能E_(i).对计算结果进行比较,■及■曲线更适合用于计算禁带宽度;降温的■曲线更适合用于计算杂质电离能.Through the experiments of temperature-dependent Hall effect,the electrical characteristic of a N-type Ge sample was measured within a temperature range of 77~420K.The sample band gap width E_(g) was obtained according to the calculation of the slope of data curves in high-temperature intrinsic conductive region,and the ionization energy impurity E_(i) according to that in low-temperature impurity ionization region.It could be concluded that■and■curves were suitable for calculating E_(g) and cooling■curve was suitable for calculating E_(i).

关 键 词：变温霍尔效应 禁带宽度 杂质电离能 N型Ge半导体 

分 类 号：O441[理学—电磁学]