Wet etching and passivation of GaSb-based very long wavelength infrared detectors  

作　　者：Xue-Yue Xu Jun-Kai Jiang Wei-Qiang Chen Su-Ning Cui Wen-Guang Zhou Nong Li Fa-Ran Chang Guo-Wei Wang Ying-Qiang Xu Dong-Wei Jiang Dong-Hai Wu Hong-Yue Hao Zhi-Chuan Niu 许雪月;蒋俊锴;陈伟强;崔素宁;周文广;李农;常发冉;王国伟;徐应强;蒋洞微;吴东海;郝宏玥;牛智川(State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Physics B》2022年第6期132-136,共5页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China(Grant Nos.2018YFA0209102 and 2019YFA070104);the National Natural Science Foundation of China(Grant Nos.61790581 and 61274013);the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB22)。

摘　　要：The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solution(citric acid,phosphoric acid,hydrogen peroxide,deionized water),the best solution ratio is obtained.After comparing different passivation materials such as sulfide+SiO_(2),Al_(2)O_(3),Si_(3)N_(4) and SU8,it is found that SU8 passivation can reduce the dark current of the device to a greater degree.Combining this wet etching and SU8 passivation,the of VLWIR detector with a mesa diameter of 500μm is about 3.6Ω·cm^(2) at 77 K.

关 键 词：InAs/GaSb/AlSb superlattice very long wavelength infrared(VLWIR)detector wet etching PASSIVATION 

分 类 号：TN215[电子电信—物理电子学]