Gate tunable Rashba spin-orbit coupling at CaZrO_(3)/SrTiO_(3)heterointerface  

作　　者：Wei-Min Jiang Qiang Zhao Jing-Zhuo Ling Ting-Na Shao Zi-Tao Zhang Ming-Rui Liu Chun-Li Yao Yu-Jie Qiao Mei-Hui Chen Xing-Yu Chen Rui-Fen Dou Chang-Min Xiong Jia-Cai Nie 姜伟民;赵强;凌靖卓;邵婷娜;张子涛;刘明睿;姚春丽;乔宇杰;陈美慧;陈星宇;窦瑞芬;熊昌民;聂家财(Department of Physics,Beijing Normal University,Beijing 100875,China;State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China)

机构地区：[1]Department of Physics,Beijing Normal University,Beijing 100875,China [2]State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China

出　　处：《Chinese Physics B》2022年第6期615-619,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grants Nos.92065110,11974048,and 12074334)。

摘　　要：High mobility quasi two-dimensional electron gas(2DEG)found at the CaZrO_(3)/SrTiO_(3) nonpolar heterointerface is attractive and provides a platform for the development of functional devices and nanoelectronics.Here we report that the carrier density and mobility at low temperature can be tuned by gate voltage at the CaZrO_(3)/SrTiO_(3) interface.Furthermore,the magnitude of Rashba spin-orbit interaction can be modulated and increases with the gate voltage.Remarkably,the diffusion constant and the spin-orbit relaxation time can be strongly tuned by gate voltage.The diffusion constant increases by a factor of~19.98 and the relaxation time is reduced by a factor of over three orders of magnitude while the gate voltage is swept from-50 V to 100 V.These findings not only lay a foundation for further understanding the underlying mechanism of Rashba spin-orbit coupling,but also have great significance in developing various oxide functional devices.

关 键 词：CaZrO_(3)/SrTiO_(3) 2DEG Rashba spin-orbit coupling gate voltage 

分 类 号：O469[理学—凝聚态物理]