Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes  

作　　者：Ying-Zhe Wang Mao-Sen Wang Ning Hua Kai Chen Zhi-Min He Xue-Feng Zheng Pei-Xian Li Xiao-Hua Ma Li-Xin Guo Yue Hao 王颖哲;王茂森;化宁;陈凯;何志敏;郑雪峰;李培咸;马晓华;郭立新;郝跃(Key Laboratory of Wide Bandgap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China;Shanghai Aerospace Electronic Technology Institute,Shanghai 201109,China;School of Advanced Materials and Nanotechnology,Xidian University,Xi’an 710071,China;School of Physics and Optoelectronic Engineering,Xidian University,Xi’an 710071,China)

机构地区：[1]Key Laboratory of Wide Bandgap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China [2]Shanghai Aerospace Electronic Technology Institute,Shanghai 201109,China [3]School of Advanced Materials and Nanotechnology,Xidian University,Xi’an 710071,China [4]School of Physics and Optoelectronic Engineering,Xidian University,Xi’an 710071,China

出　　处：《Chinese Physics B》2022年第6期678-682,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.62104180,61974115,11690042,61634005,61974111,12035019,and 61904142);the Fundamental Research Funds for the Central Universities(Grant No.XJS221106);the Key Research and Development Program of Shaanxi,China(Grant No.2020ZDLGY03-05)。

摘　　要：The degradation mechanism of GaN-based near-ultraviolet(NUV,320-400 nm)light emitting diodes(LEDs)with low-indium content under electrical stress is studied from the aspect of defects.A decrease in the optical power and an increase in the leakage current are observed after electrical stress.The defect behaviors are characterized using deep level transient spectroscopy(DLTS)measurement under different filling pulse widths.After stress,the concentration of defects with the energy level of 0.47-0.56 eV increases,accompanied by decrease in the concentration of 0.72-0.84 eV defects.Combing the defect energy level with the increased yellow luminescence in photoluminescence spectra,the device degradation can be attributed to the activation of the gallium vacancy and oxygen related complex defect along dislocation,which was previously passivated with hydrogen.This study reveals the evolution process of defects under electrical stress and their spatial location,laying a foundation for manufacture of GaN-based NUV LEDs with high reliability.

关 键 词：light emitting diodes GaN electrical stress DEFECT 

分 类 号：TN312.8[电子电信—物理电子学]