A high rectification efficiency Si_(0.14)Ge_(0.72)Sn_(0.14)-Ge_(0.82)Sn_(0.18)-Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission  

作　　者：Dong Zhang Jianjun Song Xiaohuan Xue Shiqi Zhang 张栋;宋建军;薛笑欢;张士琦(School of Microelectronics,Xidian University,Xi’an 710071,China;Radiation Resistant Integrated Circuit Technology Laboratory of China Aerospace Science and Technology Group Corporation,Xi’an 710071,China)

机构地区：[1]School of Microelectronics,Xidian University,Xi’an 710071,China [2]Radiation Resistant Integrated Circuit Technology Laboratory of China Aerospace Science and Technology Group Corporation,Xi’an 710071,China

出　　处：《Chinese Physics B》2022年第6期702-711,共10页中国物理B（英文版）

基　　金：supported by the National 111 Center(Grant No.B12026);Research on***Technology of Intelligent Reconfigurable General System(Grant No.F020250058)。

摘　　要：The design strategy and efficiency optimization of a Ge-based n-type metal-oxide-semiconductor field-effect transistor(n-MOSFET)with a Si_(0.14)Ge_(0.72)Sn_(0.14)-Ge_(0.82)Sn_(0.18)-Ge quantum structure used for 2.45 GHz weak energy microwave wireless energy transmission is reported.The quantum structure combined withδ-doping technology is used to reduce the scattering of the device and improve its electron mobility;at the same time,the generation of surface channels is suppressed by the Si_(0.14)Ge_(0.72)Sn_(0.14) cap layer.By adjusting the threshold voltage of the device to 91 mV,setting the device aspect ratio to 1μm/0.4μm and adopting a novel diode connection method,the rectification efficiency of the device is improved.With simulation by Silvaco TCAD software,good performance is displayed in the transfer and output characteristics.For a simple half-wave rectifier circuit with a load of 1 pf and 20 kΩ,the rectification efficiency of the device can reach 7.14%at an input power of-10 dBm,which is 4.2 times that of a Si MOSFET(with a threshold voltage of 80 mV)under the same conditions;this device shows a better rectification effect than a Si MOSFET in the range of-30 dBm to 6.9 dBm.

关 键 词：microwave wireless energy transmission quantum structure GeSn MOS rectification 

分 类 号：TM724[电气工程—电力系统及自动化]