Modeling and numerical simulation of electrical and optical characteristics of a quantum dot light-emitting diode based on the hopping mobility model:Influence of quantum dot concentration  

作　　者：Pezhman Sheykholeslami-Nasab Mahdi Davoudi-Darareh Mohammad Hassan Yousefi 

机构地区：[1]Faculty of Science,Malek Ashtar University of Technology,Shahin-Shahr,Iran

出　　处：《Chinese Physics B》2022年第6期725-735,共11页中国物理B（英文版）

摘　　要：We present a comprehensive numerical framework for the electrical and optical modeling and simulation of hybrid quantum dot light-emitting diodes(QD-LEDs).We propose a model known as hopping mobility to calculate the carrier mobility in the emissive organic layer doped with quantum dots(QDs).To evaluate the ability of this model to describe the electrical characteristics of QD-LEDs,the measured data of a fabricated QD-LED with different concentrations of QDs in the emissive layer were taken,and the corresponding calculations were performed based on the proposed model.The simulation results indicate that the hopping mobility model can describe the concentration dependence of the electrical behavior of the device.Then,based on the continuity equation for singlet and triplet excitons,the exciton density profiles of the devices with different QD concentrations were extracted.Subsequently,the corresponding luminance characteristics of the devices were calculated,where the results are in good agreement with the experimental data.

关 键 词：hybrid quantum dot light-emitting diode(QD-LED) concentration-dependent hopping mobility effective transport model Gaussian band structure 

分 类 号：O413[理学—理论物理] TN312.8[理学—物理]