Spin transport in epitaxial Fe3O4/GaAs lateral structured devices  

作　　者：Zhaocong Huang Wenqing Liu Jian Liang Qingjie Guo Ya Zhai Yongbing Xu 黄兆聪;刘文卿;梁健;郭庆杰;翟亚;徐永兵(School of Physics,Southeast University,Nanjing 211189,China;Spintronics and Nanodevice Laboratory,Department of Electronics,University of York,York YO105DD,United Kingdom;York-Nanjing Joint Center in Spintronics,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China;Department of Electronic Engineering,Royal Holloway University of London,Egham,Surrey TW200EX,United Kingdom)

机构地区：[1]School of Physics,Southeast University,Nanjing 211189,China [2]Spintronics and Nanodevice Laboratory,Department of Electronics,University of York,York YO105DD,United Kingdom [3]York-Nanjing Joint Center in Spintronics,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China [4]Department of Electronic Engineering,Royal Holloway University of London,Egham,Surrey TW200EX,United Kingdom

出　　处：《Chinese Physics B》2022年第6期736-740,共5页中国物理B（英文版）

基　　金：supported by the National Key Research and Development Program of China(Grant No.2017YFA0204800);the National Natural Science Foundation of China(Grant Nos.52071079 and 11504047)。

摘　　要：Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor(SFET),which has the potential for combining the data storage and process in a single device.Here we report the spin dependent transport on a Fe_(3)O_(4)/GaAs based lateral structured device.Parallel and antiparallel states of two Fe_(3)O_(4) electrodes are achieved.A clear MR loop shows the perfect butterfly shape at room temperature,of which the intensity decreases with the reducing current,showing the strong bias dependence.Understanding the spin-dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFETs.

关 键 词：spin field-effect transistor spin injection and detection half metal MAGNETORESISTANCE 

分 类 号：TN386[电子电信—物理电子学] O469[理学—凝聚态物理]