分子束外延的CdTe在碲镉汞中波器件中钝化效果  

The passivation effects of CdTe deposited by MBE in MW HgCdTe photodiodes

作　　者：解晓辉[1] 林春[1] 陈路[1] 赵玉 张竞 何力[1] XIE Xiao-Hui;LIN Chun;CHEN Lu;ZHAO Yu;ZHANG Jing;HE Li(Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]中国科学院上海技术物理研究所,上海200083

出　　处：《红外与毫米波学报》2022年第2期413-419,共7页Journal of Infrared and Millimeter Waves

基　　金：上海市青年科技英才扬帆计划(18YF1427400)。

摘　　要：采用分子束外延技术(MBE)制备了碲化镉(CdTe)原位钝化的中波碲镉汞(HgCdTe)材料。原子力显微镜(AFM)和扫描电子显微镜(SEM)测试结果表明,分子束原位外延的CdTe可见cross-hatch,表面粗糙度为1~2 nm,CdTe和HgCdTe界面结合紧密。微波光导测试结果显示,77 K时,与表面处理后非原位CdTe钝化的HgCdTe材料相比,CdTe原位钝化的HgCdTe材料的少子寿命较大。制备了分子束外延CdTe原位钝化的中波HgCdTe光伏器件,和相同材料上的非原位CdTe/ZnS双层钝化制备的器件I-V特性相似。The characterizations of CdTe film deposited by molecular beam epitaxy(MBE)in-suit had been studied using atomic force microscopy(AFM)and scanning electron microscopy(SEM). The cross-hatch pattern can be seen on the CdTe film surface. The roughness of CdTe film deposited by MBE in-suit on HgCdTe is about 1~2 nm. The minority carrier lifetime of HgCdTe passivated by CdTe in-suit is larger than the HgCdTe passivated by the CdTe deposited by E-beam evaporation after etched top 1um HgCdTe at 77 K. The I-V characteristics of MW photodiodes passivated by the CdTe in-suit are similar with the photodiodes passivated by the CdTe/ZnS films.

关 键 词：碲化镉 原位钝化 原子力显微镜 扫描电子显微镜 电压电流特性 

分 类 号：TN304.2[电子电信—物理电子学] TN314.2