面向MOCVD生长InAs/GaSb超晶格红外探测的InAs衬底表面制备  

Preparation of epi-ready In As substrate surface for InAs/GaSb superlattice infrared detectors grown by MOCVD

作　　者：刘丽杰 赵有文[1,2] 黄勇 赵宇[3] 王俊[1] 王应利[1] 沈桂英[1] 谢辉 LIU Li-Jie;ZHAO You-Wen;HUANG Yong;ZHAO Yu;WANG Jun;WANG Ying-Li;SHEN Gui-Ying;XIE Hui(Key Laboratory of Semiconductor Materials Science,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China;Key Lab of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]中国科学院半导体研究所材料重点实验室北京市低维半导体材料与器件重点实验室,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049 [3]中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,江苏苏州215123

出　　处：《红外与毫米波学报》2022年第2期420-424,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Natural Science Foundation of China(61904175)。

摘　　要：采用全反射X射线荧光光谱(total reflection X-ray fluorescence,TXRF)和X射线光电子能谱(X-ray photo-electron spectroscopy,XPS)检测方法研究InAs衬底化学机械抛光后经过不同湿法化学溶液联合作用后衬底表面的金属杂质残留浓度和氧化物组分的变化。湿法化学清洗后的InAs表面检测到金属杂质Si,K和Ca,它们的浓度随溶液组合的变化而变化。金属杂质残留浓度较高的InAs衬底表面同时也测得较多粒径为80 nm的颗粒。提出了一种行之有效的InAs衬底湿化学清洗方法,可制备出金属杂质残留少、颗粒少、氧化层薄InAs衬底表面,此表面有利于MOCVD方法生长高质量InAs/GaSb超晶格红外探测器外延。Total reflection X-ray fluorescence spectroscopy(TXRF)and X-ray photo-electron spectroscopy(XPS)have been used to investigate residual impurities and oxides on polished InAs substrate surface wet cleaned by different solution combination. Metal impurities Si,K and Ca are routinely detected on the cleaned InAs surface and their concentration change with the variation of solution combination. A large quantity of particles(80nm size)is measured on the InAs substrate surface with higher residual impurity concentration. An effective wet chemical cleaning procedure is presented to prepare InAs substrate surface with less residual impurity,small particle quantity and thin oxide layer,which are beneficial to high quality epitaxial growth.

关 键 词：砷化铟 衬底 表面清洗 全反射X射线荧光光谱 X射线光电子能谱 

分 类 号：O43[机械工程—光学工程]