铌钨氧化物掺杂改性氧化亚硅提升首次充放电效率的研究  

Study on upgrading first charge and discharge efficiency through modification of silicon oxide by niobium tungsten oxides doping

作　　者：张继伟[1] 谢松涛 谢梦雨 洪灿灿 完颜俊超 陈垒[2] 赵金安 ZHANG Ji-wei;XIE Song-tao;XIE Meng-yu;HONG Can-can;WANYAN Jun-chao;CHEN Lei;ZHAO Jin-an(College of Environment and Bioengineering,Henan University of Engineering,Zhengzhou 451191,China;College of Chemical and Printing-dyeing Engineering,Henan University of Engineering,Zhengzhou 450007,China)

机构地区：[1]河南工程学院环境与生物工程学院,河南郑州451191 [2]河南工程学院化工与印染工程学院,河南郑州450007

出　　处：《现代化工》2022年第6期167-170,共4页Modern Chemical Industry

基　　金：2021年度河南省重点研发与推广专项(科技攻关)(212102210215);2021年度河南工程学院科研培育基金(PYXM202101)。

摘　　要：采用铌钨氧化物(NWO)对SiO进行掺杂改性,并与用五氧化二铌(NO)、钛酸锂(LTO)、钛铌氧化物(TNO)改性的材料进行对比研究,分别记为SiO@NWO、SiO@NO、SiO@LTO、SiO@TNO。利用X射线衍射仪对改性后的材料进行测试。结果表明,SiO的首次放电比容量为1980.6 mA·h/g,充电比容量为891.2 mA·h/g,充放电效率为45.0%;SiO@NWO的首次放电比容量为464.0 mA·h/g,充电比容量为327.1 mA·h/g,充放电效率为70.5%,首次充放电效率显著提升。交流阻抗测试结果表明,SiO@NWO的电荷转移阻抗R_(ct)为113.5Ω,显著小于SiO的213.7Ω,表明材料的导电性能得到提高。Niobium tungsten oxide(NWO)is used to dope SiO,and niobium pentoxide(NO),lithium titanate(LTO)and titanium niobium oxide(TNO)are used as comparative studies,which are denoted as SiO@NWO,SiO@NO,SiO@LTO,[e-mail] modified materials are tested by X-ray diffractometer.The results show that the first discharge specific capacity of SiO is 1980.6 mAh·g^(-1),the charge specific capacity is 891.2 mAh·g^(-1),and the charge and discharge efficiency is 45.0%.The first discharge specific capacity of SiO@NWO is 464.0 mAh·g^(-1),the charge specific capacity is 327.1 mAh·g^(-1),and the charging and discharging efficiency is 70.5%,showing a significant improvement.AC impedance test results show that the charge transfer resistance Rct of SiO@NWO is 113.5Ω,which is significantly smaller than the 213.7Ωof SiO,indicating an improved electrical conductivity.

关 键 词：氧化亚硅 铌钨氧化物 首次充放电效率 导电性 

分 类 号：TM912.9[电气工程—电力电子与电力传动]