Quantum prospects for hybrid thin-film lithium niobate on silicon photonics  被引量:3

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作  者:Jeremy C.Adcock Yunhong Ding 

机构地区:[1]Center for Silicon Photonics for Optical Communication,Technical University of Denmark,2800 Kgs.Lyngby,Denmark

出  处:《Frontiers of Optoelectronics》2022年第1期73-79,共7页光电子前沿(英文版)

基  金:We acknowledge funding from VILLUM FONDEN,QUANPIC(ref.00025298);the Center of Excellence,Denmark SPOC(ref.DNRF123).

摘  要:Photonics is poised to play a unique role in quantum technology for computation,communications and sensing.Meanwhile,integrated photonic circuits-with their intrinsic phase stability and high-performance,nanoscale components-offer a route to scaling.However,each integrated platform has a unique set of advantages and pitfalls,which can limit their power.So far,the most advanced demonstrations of quantum photonic circuitry has been in silicon photonics.However,thin-film lithium niobate(TFLN)is emerging as a powerful platform with unique capabilities;advances in fabrication have yielded loss metrics competitive with any integrated photonics platform,while its large second-order nonlinearity provides efficient nonlinear processing and ultra-fast modulation.In this short review,we explore the prospects of dynamic quantum circuits-such as multiplexed photon sources and entanglement generation-on hybrid TFLN on silicon(TFLN/Si)photonics and argue that hybrid TFLN/Si photonics may have the capability to deliver the photonic quantum technology of tomorrow.

关 键 词:Quantum photonics Quantum information Quantum communications Lithium niobate(LN) Silicon photonics 

分 类 号:TN25[电子电信—物理电子学]

 

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