砷烷的纯化技术研究进展  

Research Progress on Purification Technology of Arsine

作　　者：刘英杰 景显东 赵健 常琳[2] 王雅婷 LIU Yingjie;JING Xiandong;ZHAO Jian;CHANG Lin;WANG Yating(Zhonghao Guangming Research and Design Institute of Chemical Industry Co. , Ltd. , Dalian 116031, China)

机构地区：[1]中昊光明化工研究设计院有限公司《低温与特气》期刊,辽宁大连116031 [2]中昊光明化工研究设计院有限公司,辽宁大连116031

出　　处：《低温与特气》2022年第3期9-13,共5页Low Temperature and Specialty Gases

摘　　要：砷烷是发光二极管、超大规模集成电路、GaAs、GaAsP生长,N型硅外延、扩散、离子注入掺杂等不可缺少的重要原料,因此需要有极高的纯度。主要概述了砷烷常用的纯化方法,包括吸附法、低温冷冻/精馏法、膜分离法等。Arsine is an indispensable and important raw material for light-emitting diodes,very large scale integrated circuits,GaAs,GaAsP growth,N-type silicon epitaxy,diffusion,ion implantation and doping,etc.,so it needs extremely high purity.The common purification methods of arsine are summarized,including adsorption,cryogenic freezing/rectification,membrane separation and so on.

关 键 词：砷烷 纯化 应用进展 

分 类 号：TQ117[化学工程—无机化工]