Origin of superior pseudocapacitive mechanism of transition metal nitrides  

作　　者：Chao Huang Ping Qin Dan Li Qingdong Ruan Hao Song Liangliang Liu Yuzheng Wu Yinghe Ma Qingwei Li Kaifu Huo Paul K.Chu 

机构地区：[1]Department of Physics,Department of Materials Science and Engineering,and Department of Biomedical Engineering,City University of Hong Kong,Hong Kong 999077,China [2]Department of Physics,Hong Kong Baptist University(HKBU)Kowloon Tong,Hong Kong 999077,China [3]The State Key Laboratory of Refractories and Metallurgy,Institute of Advanced Materials and Nanotechnology,Wuhan University of Science and Technology,Wuhan 430081,Hubei,China [4]Wuhan National Laboratory for Optoelectronics(WNLO),School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,Hubei,China [5]Advanced Research Institute for Multidisciplinary Science,Qilu University of Technology(Shandong Academy of Sciences),Jinan 250307,Shandong,China

出　　处：《Journal of Energy Chemistry》2022年第6期561-568,I0016,共9页能源化学（英文版）

基　　金：financially supported by the Hong Kong Scholars Program (XJ2018009);the City University of Hong Kong Strategic Research Grant (SRG) (7005505);the Shenzhen – Hong Kong Innovative Collaborative Research and Development Program (SGLH20181109110802117 and CityU 9240014);the National Natural Science Foundation of China(U2004210, 21875080, 51572100 and 52003129);the Innovative Research Group Project of the Natural Science Foundation of Hubei Province (2019CFA020);the Shandong Provincial Natural Science Foundation (ZR2019BB006)。

摘　　要：Large-scale deployment of Internet of Things (IoT),a revolutionary innovation for a better world,is hampered by the limitation of energy self-sufficiency.Constructing transition metal nitride (TMN)-based micro-supercapacitors is a possible solution by taking advantage of the high conductivity,large specific capacitance,and large tap density of the materials.However,the pseudocapacitive storage mechanism of TMNs is still unclear consequently impeding the design of microdevices.Herein,the functions and mechanism of TMNs with different metal oxynitride (TMNO_(x)) concentrations in pseudocapacitive electrodes are investigated systematically by in situ Raman scattering,ex situ X-ray photoelectron spectroscopy,as well as ion isolation and substitution cyclic voltammetry.It is found that the specific capacitances of TMNs depend on the TMNO_(x) concentrations and the N–M–O site is responsible for the large pseudocapacitance via the Faradic reaction between TMNO_(x) and OH^(-).Our study elucidates the mechanism pertaining to pseudocapacitive charge storage of TMNs and provides insights into the design and optimization of TMNO_(x) as well as other electrode materials for pseudocapacitors.

关 键 词：Internet of Things(IoT) Transition metal nitride(TMN) Metal oxynitride SUPERCAPACITORS 

分 类 号：TM53[电气工程—电器] O611.6[理学—无机化学]