X波段小型封装GaN功率放大器设计  

Design of X-Band Miniature Package GaN Power Amplifier

作　　者：崔朝探 陈政 杜鹏搏 焦雪龙[1,2] 曲韩宾 CUI Zhaotan;CHEN Zheng;DU Pengbo;JIAO Xuelong;QU Hanbin(Hebei New North China Integrated Circuit Co.,Ltd.,Shijiazhuang 050200,China;Hebei Satellite Communication RF Technology Innovation Center,Shijiazhuang 050200,China;China Electronics Technology Group Corporation No.13 Research Institute,Shijiazhuang 050051,China)

机构地区：[1]河北新华北集成电路有限公司,石家庄050200 [2]河北省卫星通信射频技术创新中心,石家庄050200 [3]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《电子与封装》2022年第6期33-38,共6页Electronics & Packaging

摘　　要：基于GaN功率放大器模块化、小型化的发展需求,设计了一款X波段小型管壳封装的功率放大器。通过合理排布电路结构,实现了封装尺寸的小型化。由于器件功率密度不断提升,散热问题不容忽视,通过对不同材料的管壳底座进行热仿真分析,模拟芯片的温度分布,根据仿真结果选定底座材料为钼铜Mo70Cu30,利用红外热成像仪测试芯片结温为107.83℃,满足I级降额要求。最终设计的功率放大器尺寸为18.03 mm×8.70 mm×3.03 mm,在28 V工作电压脉冲测试条件下,9.3~9.5 GHz频带内饱和输出功率大于46 d Bm,功率附加效率大于36%,功率增益大于24.5 d B,电性能测试结果全部满足技术指标要求。Aiming at the development demands of modularization and miniaturization of GaN power amplifier,an X-band miniature package power amplifier is designed.The miniaturization of package size is realized through arranging circuit structure reasonably.With the increasement of the device power density,heat dissipation has become a problem that can not be ignored.Through thermal simulation analysis of bases of different materials,the chip temperature distribution is obtained.According to the simulation results,the base material is selected as Mo70Cu30.The infrared thermography instrument is implemented to test the actual junction temperature,and the test result(107.83℃)is up to the level-I derating standard.The size of the designed power amplifier module is only 18.03 mm×8.70 mm×3.03 mm.Under 28 V voltage pulse test condition,the saturated output power is greater than 46 d Bm,the power added efficiency is greater than 36%,and the power gain is greater than 24.5 d B in 9.3-9.5 GHz frequency band.All electrical performance test results meet the technical index requirements.

关 键 词：GaN功率放大器 小型封装 热仿真分析 电性能测试 

分 类 号：TN305.94[电子电信—物理电子学]