W波段5W GaN四路合成功率放大器MMIC  

W-Band 5 W GaN Power Amplifier MMIC Using Four-Way Combination Technology

作　　者：许春良[1] 杨卅男 万悦 Xu Chunliang;Yang Sanan;Wan Yue(The 13^(th) Research Institute CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2022年第5期391-396,共6页Semiconductor Technology

摘　　要：基于4英寸(1英寸=2.54 cm)亚微米T型栅GaN高电子迁移率晶体管(HEMT)工艺,采用AlGaN/GaN异质结构外延衬底,研制了一款W波段功率放大器单片微波集成电路(MMIC)。该功率放大器MMIC通过威尔金森功分器/合成器实现4个饱和输出功率大于1.5 W的单元子电路片上功率合成,每个单元子电路采用四级级联拓扑结构,利用毫米波高低阻抗线、低寄生介质电容和λ/4传输线等元件实现低损耗拓扑结构。测试结果表明,在91~96 GHz,该功率放大器MMIC线性增益大于17 dB,输入、输出回波损耗均小于-8 dB,饱和输出功率大于5 W,功率附加效率大于15%。A power amplifier monolithic microwave integrated circuit(MMIC)was developed for W-band application which was fabricated on the AlGaN/GaN hetero-structure epitaxial substrate using 4-inch(1-inch=2.54 cm)sub-micron T-gate GaN high electron mobility transistor(HEMT)technology.The power amplifier MMIC was realized using on-chip power synthesis of four sub-circuits with a saturated output power greater than 1.5 W through Wilkinson power divider/combiner.Each sub-circuit adopted four-stage topology.The low-loss topology was achieved using components such as millimeter-wave high and low impedance lines,low parasitic dielectric capacitance,andλ/4 transmission lines.Measurement results show that the linear gain of the power amplifier is more than 17 dB at 91-96 GHz,input and output return loss are both less than-8 dB,the saturated output power is more than 5 W,and the power-added-efficiency is more than 15%.

关 键 词：W波段 GaN高电子迁移率晶体管(HEMT) 功率放大器 功率合成 威尔金森 单片微波集成电路(MMIC) 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.75