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作 者:谭李睿泽 暴净净 马婷 石宇星 邱桂兰 施玮 苏小丽 曾涛 陈云霞 TAN Liruize;BAO Jingjing;MA Ting;SHI Yuxing;QIU Guilan;SHI Wei;SU Xiaoli;ZENG Tao;CHEN Yunxia(School of Materials Science and Engineering,Jingdezhen Ceramic University,Jingdezhen 333403,China;Jingdezhen Key Laboratory of Environmental Ceramics,Jingdezhen 333403,China)
机构地区:[1]景德镇陶瓷大学材料科学与工程学院,景德镇333403 [2]景德镇市环境陶瓷重点实验室,景德镇333403
出 处:《中国陶瓷》2022年第6期1-8,16,共9页China Ceramics
基 金:国家自然科学基金(51862017);江西省科技厅国际合作项目(20212BDH80005);江西省教育厅科技项目(GJJ190704);景德镇市环境陶瓷材料重点实验室项目(20192PTJS002);景德镇市科技局项目(20202GYZD013-10);大学生创新创业项目(S202110408034;X202010408016)。
摘 要:近年来,纳米尺度半导体材料由于其独特的物理化学性质在光电应用领域受到了广泛关注。在众多种类的纳米半导体材料中,I-Ⅲ-VI_(2)/I-V-VI_(2)族三元金属硫化物由于其带隙易调、能通过化学计量比调控能带结构、毒性较低、原料来源广泛以及价格低廉等特点引起许多研究者的研究兴趣。其中AgBiS_(2)作为该材料体系代表之一,具有合适的带隙、较高的吸收系数、耐潮湿等优异等特性,作为光电器件有源层材料具有较好的发展前景。首先结合AgBiS_(2)材料结构基本性质对其光电特性进行阐述,总结应用于光电领域的AgBiS_(2)纳米材料多样合成钝化处理途径及其在光电应用领域最新进展,并对其未来发展过程可能遇到的问题进行探讨。In recent years,nanoscale semiconductor materials have received much attention in optoelectronic applications due to their unique physicochemical properties.Among the many types of candidates,the I-III-VI_(2)/I-V-VI_(2) group of ternary metal sulphides have attracted the interest of many researchers due to their easy band gap tuning,ability to modulate the band structure by adjusting the stoichiometric ratio,low toxicity,available raw-materials and low-price.As one of the representatives of this material system,AgBiS_(2) has a suitable band gap,high absorption coefficient and excellent humidity resistance,and shows a promising future as an active layer material for optoelectronic devices.In this paper,we firstly describe the optoelectronic properties of AgBiS_(2) materials in the terms of their basic structural properties,then summarize the diverse synthesis and passivation routes of AgBiS_(2) nanomaterials and recent progresses in optoelectronic applications,and lastly put forward possible issues that may be encountered in their future development.
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