基于FPGA的IGBT暂态模型及仿真研究  

FPGA-based IGBT transient model and simulation research

作　　者：陈志耀 王芳[1] 左亚辉 CHEN Zhiyao;WANG Fang;ZUO Yahui(School of Electrical Engineering,Shanghai Dianji University,Shanghai 201306,China)

机构地区：[1]上海电机学院电气学院,上海201306

出　　处：《上海电机学院学报》2022年第3期165-170,181,共7页Journal of Shanghai Dianji University

基　　金：上海市科学技术委员会科研资助项目(17DZ1201200)。

摘　　要：绝缘栅双极型晶体管(IGBT)电磁暂态模型的精度与计算效率可直接影响设备和系统的可靠性。为体现该器件的特性及其受到的应力,构建了一种基于现场可编程逻辑门阵列(FPGA)的IGBT暂态模型。该模型分析了门极驱动对开关暂态的影响,考虑了死区电压、杂散电感、米勒平台效应及反并二极管的反向恢复特性等电气特性,并在Vivado中建立了双脉冲电路得到IGBT的暂态特性。最后,采用本文模型仿真BUCK电路,验证了模型的有效性。The accuracy and calculation efficiency of electromagnetic transient model of insulated gate bipolar transistor(IGBT)can directly affect the reliability of equipment and system.In order to reflect the characteristics of the device and its stress,a transient model of IGBT based on field programmable gate array(FPGA)is proposed.The model analyzes the effect of gate drive on switching transients,and considers electrical characteristics such as dead-time voltage,stray inductance,Miller platform effect,and reverse recovery characteristics of an anti-parallel diode.Then,a double-pulse circuit is built and applied in Vivado to obtain the transient characteristics of the IGBT.Finally,the proposed model is used to simulate the BUCK circuit,and the validity of the model is verified.

关 键 词：现场可编程逻辑门阵列 绝缘栅双极型晶体管 暂态模型 元器件建模 电磁暂态 

分 类 号：TM711[电气工程—电力系统及自动化]